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Non-volatile memory

  • US 9,082,500 B1
  • Filed: 09/16/2014
  • Issued: 07/14/2015
  • Est. Priority Date: 01/10/2014
  • Status: Active Grant
First Claim
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1. A non-volatile memory, comprising:

  • a memory array comprising m×

    n memory cells, wherein the memory array is connected with m word lines, n source lines and n bit lines;

    a row decoder connected with the m word lines for enabling one of the m word lines, thereby determining a selected row of n memory cells, wherein the n memory cells in the selected row are connected with the n source lines and the n bit lines;

    a source line decoder connected with the n source lines, wherein by the source line decoder, an x-th source line of the n source lines is connected with a source line voltage but the other source lines of the n source lines are in a floating state;

    a column decoder connected with the n bit lines, wherein by the column decoder, an x-th bit line of the n bit lines is connected with a data line but the other bit lines of the n bit lines are connected with a reference voltage; and

    a sensing circuit connected with the column decoder through the data line, wherein the sensing circuit determines a storing state of a selected memory cell according to a memory current flowing through the data line,wherein x is a positive integer and 1≦

    x≦

    n.

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