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Etch rate modeling and use thereof for in-chamber and chamber-to-chamber matching

  • US 9,082,594 B2
  • Filed: 06/27/2014
  • Issued: 07/14/2015
  • Est. Priority Date: 07/26/2013
  • Status: Active Grant
First Claim
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1. A method comprising:

  • receiving a voltage and a current measured at an output of a radio frequency (RF) generator of a first plasma system;

    calculating a sum of a first term, a second term, and a third term, wherein the first term is a first product of a coefficient and a function of the voltage, the second term is a second product of a coefficient and a function of the current, and the third term is a third product of a coefficient, a function of the voltage, and a function of the current;

    determining the sum to be the etch rate associated with the first plasma system; and

    adjusting power output from an RF generator of a second plasma system to achieve the etch rate associated with the first plasma system,wherein the method is executed by a processor.

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