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Semiconductor device comprising an oxide semiconductor layer

  • US 9,082,857 B2
  • Filed: 08/20/2009
  • Issued: 07/14/2015
  • Est. Priority Date: 09/01/2008
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a gate electrode over an insulating surface;

    a gate insulating layer over the gate electrode;

    a semiconductor layer over the gate insulating layer;

    a first source region and a first drain region over the semiconductor layer; and

    a second source region and a second drain region over the first source region and the first drain region,wherein the semiconductor layer is an oxide semiconductor layer,wherein the first source region and the first drain region are oxide semiconductor layers, have a lower oxygen concentration than the semiconductor layer and include a crystal grain with a size of 1 nm to 10 nm, andwherein the second source region and the second drain region are oxide semiconductor layers, and contain W, Mo, Ti, Ni, or Al.

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