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Transistor with oxide semiconductor channel having protective layer

  • US 9,082,861 B2
  • Filed: 10/18/2012
  • Issued: 07/14/2015
  • Est. Priority Date: 11/11/2011
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first insulating layer;

    a gate electrode;

    a gate insulating layer;

    an oxide semiconductor layer including a channel; and

    a protective layer,wherein the gate insulating layer overlaps with the first insulating layer with the gate electrode therebetween;

    wherein the oxide semiconductor layer overlaps with the gate electrode with the gate insulating layer interposed therebetween,wherein the protective layer overlaps with the gate insulating layer with the oxide semiconductor layer interposed therebetween,wherein the protective layer includes an oxide material containing In, an element M, and Zn,wherein the element M is a Group 3A element, a Group 4A element, or a Group 4B element,wherein the protective layer extends beyond an end portion of the oxide semiconductor layer in a channel width direction,wherein a hydrogen concentration of the first insulating layer is lower than or equal to 1 ×

    1018 atoms/cm3, andwherein a hydrogen concentration of the gate insulating layer is lower than or equal to 1 ×

    1018 atoms/cm3.

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