Transistor with oxide semiconductor channel having protective layer
First Claim
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1. A semiconductor device comprising:
- a first insulating layer;
a gate electrode;
a gate insulating layer;
an oxide semiconductor layer including a channel; and
a protective layer,wherein the gate insulating layer overlaps with the first insulating layer with the gate electrode therebetween;
wherein the oxide semiconductor layer overlaps with the gate electrode with the gate insulating layer interposed therebetween,wherein the protective layer overlaps with the gate insulating layer with the oxide semiconductor layer interposed therebetween,wherein the protective layer includes an oxide material containing In, an element M, and Zn,wherein the element M is a Group 3A element, a Group 4A element, or a Group 4B element,wherein the protective layer extends beyond an end portion of the oxide semiconductor layer in a channel width direction,wherein a hydrogen concentration of the first insulating layer is lower than or equal to 1 ×
1018 atoms/cm3, andwherein a hydrogen concentration of the gate insulating layer is lower than or equal to 1 ×
1018 atoms/cm3.
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Abstract
A highly reliable semiconductor device is provided. Over an oxide semiconductor layer in which a channel is formed, an insulating layer including the oxide semiconductor material having a higher insulating property than an oxide semiconductor layer is formed. A material which contains an element M and is represented by a chemical formula InMZnOX (X>0) or an oxide material which contains an element M1 and an element M2 and is represented by a chemical formula InM1XM2(1−X)ZnO (0<X<1+α where α is less than 0.3 and (1−X)>0) is used as the oxide semiconductor material having a high insulating property. Ti, Zr, Hf, Ge, Ce, or Y is used as the element M and the element M2, for example. Ga is used as the element M1, for example.
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Citations
13 Claims
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1. A semiconductor device comprising:
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a first insulating layer; a gate electrode; a gate insulating layer; an oxide semiconductor layer including a channel; and a protective layer, wherein the gate insulating layer overlaps with the first insulating layer with the gate electrode therebetween; wherein the oxide semiconductor layer overlaps with the gate electrode with the gate insulating layer interposed therebetween, wherein the protective layer overlaps with the gate insulating layer with the oxide semiconductor layer interposed therebetween, wherein the protective layer includes an oxide material containing In, an element M, and Zn, wherein the element M is a Group 3A element, a Group 4A element, or a Group 4B element, wherein the protective layer extends beyond an end portion of the oxide semiconductor layer in a channel width direction, wherein a hydrogen concentration of the first insulating layer is lower than or equal to 1 ×
1018 atoms/cm3, andwherein a hydrogen concentration of the gate insulating layer is lower than or equal to 1 ×
1018 atoms/cm3. - View Dependent Claims (2, 3, 4, 5, 12)
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6. A semiconductor device comprising:
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a first insulating layer; a gate electrode; a gate insulating layer; an oxide semiconductor layer including a channel; and a protective layer, wherein the gate insulating layer overlaps with the first insulating layer with the gate electrode therebetween; wherein the oxide semiconductor layer overlaps with the gate electrode with the gate insulating layer interposed therebetween, wherein the protective layer overlaps with the gate insulating layer with the oxide semiconductor layer interposed therebetween, wherein the protective layer includes an oxide material containing In, an element M1, an element M2, and Zn, wherein the element M1 is a Group 3B element, wherein the element M2 is a Group 3A element, a Group 4A element, or a Group 4B element, wherein the protective layer extends beyond an end portion of the oxide semiconductor layer in a channel width direction, wherein a hydrogen concentration of the first insulating layer is lower than or equal to 1 ×
1018 atoms/cm3, andwherein a hydrogen concentration of the gate insulating layer is lower than or equal to 1 ×
1018 atoms/cm3. - View Dependent Claims (7, 8, 9, 10, 11, 13)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsYamazaki, Shunpei
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Primary Examiner(s)Monbleau, Davienne
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Assistant Examiner(s)WHITE, SHAKA SHAKAR
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Application NumberUS13/654,889Publication NumberTime in Patent Office999 DaysField of SearchNoneUS Class Current1/1CPC Class CodesH01L 29/7869 having a semiconductor body...
