Inverted orthogonal spin transfer layer stack
First Claim
1. A magnetic device comprising:
- a pinned magnetic layer having a first fixed magnetization vector with a first fixed magnetization direction;
a free magnetic layer having a variable magnetization vector having at least a first stable state and a second stable state;
a first non-magnetic layer spatially separating the pinned magnetic layer and the free magnetic layer;
a reference magnetic layer having a second fixed magnetization vector with a second fixed magnetization direction; and
a second non-magnetic layer spatially separating the free magnetic layer and the reference magnetic layer, wherein a magnetic tunnel junction is formed by the free magnetic layer, the second non-magnetic layer, and the reference magnetic layer, wherein application of a current pulse, having a selected amplitude and duration, through the magnetic device switches the variable magnetization vector, and wherein the magnetic tunnel junction is spatially located below the pinned magnetic layer.
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Accused Products
Abstract
A magnetic device includes a pinned magnetic layer having a first fixed magnetization vector with a first fixed magnetization direction. The magnetic device also includes a free magnetic layer having a variable magnetization vector having at least a first stable state and a second stable state. The magnetic device also has a first non-magnetic layer and a reference. The first non-magnetic layer spatially separates the pinned magnetic layer and the free magnetic layer. The magnetic device also includes a second non-magnetic layer spatially separating the free magnetic layer and the reference magnetic layer. A magnetic tunnel junction, located below the pinned magnetic layer, is formed by the free magnetic layer, the second non-magnetic layer, and the reference magnetic layer. Application of a current pulse, having either positive or negative polarity and a selected amplitude and duration, through the magnetic device switches the variable magnetization vector.
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Citations
20 Claims
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1. A magnetic device comprising:
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a pinned magnetic layer having a first fixed magnetization vector with a first fixed magnetization direction; a free magnetic layer having a variable magnetization vector having at least a first stable state and a second stable state; a first non-magnetic layer spatially separating the pinned magnetic layer and the free magnetic layer; a reference magnetic layer having a second fixed magnetization vector with a second fixed magnetization direction; and a second non-magnetic layer spatially separating the free magnetic layer and the reference magnetic layer, wherein a magnetic tunnel junction is formed by the free magnetic layer, the second non-magnetic layer, and the reference magnetic layer, wherein application of a current pulse, having a selected amplitude and duration, through the magnetic device switches the variable magnetization vector, and wherein the magnetic tunnel junction is spatially located below the pinned magnetic layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A memory system comprising:
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a memory cell comprising; a pinned magnetic layer having a first fixed magnetization vector with a first fixed magnetization direction; a free magnetic layer having a variable magnetization vector having at least a first stable state and a second stable state; a first non-magnetic layer spatially separating the pinned magnetic layer and the free magnetic layer; a reference magnetic layer having a second fixed magnetization vector with a second fixed magnetization direction; and a second non-magnetic layer spatially separating the free magnetic layer and the reference magnetic layer, wherein a magnetic tunnel junction is formed by the free magnetic layer, the second non-magnetic layer, and the reference magnetic layer, wherein application of a current pulse, having a selected amplitude and duration, through the magnetic device switches the variable magnetization vector, and wherein the magnetic tunnel junction is spatially located below the pinned magnetic layer; and a current source connected to the pinned magnetic layer and the reference magnetic layer such that current passes from the second non-magnetic layer to the pinned magnetic layer. - View Dependent Claims (13, 14, 15, 16, 17)
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18. A method of making a memory device, comprising:
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forming a second non-magnetic layer spatially separating a free magnetic layer and a reference magnetic layer, wherein a magnetic tunnel junction is formed by the free magnetic layer, the second non-magnetic layer, and the reference magnetic layer, wherein application of a current pulse, having either positive or negative polarity and a selected amplitude and duration, through the magnetic device switches a variable magnetization vector of the free magnetic layer, and wherein the magnetic tunnel junction is spatially located below the pinned magnetic layer forming the reference magnetic layer having a second fixed magnetization vector with a second fixed magnetization direction; forming a first non-magnetic layer spatially separating the pinned magnetic layer and the free magnetic layer; forming a free magnetic layer having the variable magnetization vector having at least a first stable state and a second stable state; and forming a pinned magnetic layer having a first fixed magnetization vector with a first fixed magnetization direction. - View Dependent Claims (19, 20)
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Specification