Stacked bulk acoustic resonator comprising a bridge and an acoustic reflector along a perimeter of the resonator
First Claim
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1. A bulk acoustic wave (BAW) resonator, comprising:
- a first layer comprising a plurality of sub-layers, wherein a cavity exists in the first layer, the cavity having a perimeter bordering an active region of the BAW resonator;
a distributed Bragg reflector (DBR) bordering the cavity and comprising;
the plurality of sub-layers, wherein each of the sub-layers has a thickness substantially equal to an odd multiple of the quarter wavelength of the fundamental eigenmode of the BAW resonator; and
a second layer disposed beneath the first layer and the cavity;
a first electrode disposed over the cavity;
a first piezoelectric layer disposed over the first electrode;
a second electrode disposed over the first piezoelectric layer;
a second piezoelectric layer disposed over the second electrode;
a third electrode disposed over the second piezoelectric layer; and
a bridge disposed between the first electrode and the third electrode.
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Abstract
In a representative embodiment, a bulk acoustic wave (BAW) resonator comprises: a cavity provided in a first layer and having a perimeter bordering an active region of the BAW resonator, a distributed Bragg reflector (DBR) bordering the cavity, wherein the first layer is one of the layers of the DBR; a first electrode disposed over the substrate; a first piezoelectric layer disposed over the first electrode; a second electrode disposed over the first piezoelectric layer; a second piezoelectric layer disposed over the second electrode; a third electrode disposed over the second piezoelectric layer; and a bridge disposed between the first electrode and the third electrode.
489 Citations
41 Claims
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1. A bulk acoustic wave (BAW) resonator, comprising:
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a first layer comprising a plurality of sub-layers, wherein a cavity exists in the first layer, the cavity having a perimeter bordering an active region of the BAW resonator; a distributed Bragg reflector (DBR) bordering the cavity and comprising;
the plurality of sub-layers, wherein each of the sub-layers has a thickness substantially equal to an odd multiple of the quarter wavelength of the fundamental eigenmode of the BAW resonator; and
a second layer disposed beneath the first layer and the cavity;a first electrode disposed over the cavity; a first piezoelectric layer disposed over the first electrode; a second electrode disposed over the first piezoelectric layer; a second piezoelectric layer disposed over the second electrode; a third electrode disposed over the second piezoelectric layer; and a bridge disposed between the first electrode and the third electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. A bulk acoustic wave (BAW) resonator, comprising:
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a first layer comprising a plurality of sub-layers, wherein a cavity exists in the first layer, the cavity having a perimeter bordering an active region of the BAW resonator; a distributed Bragg reflector (DBR) bordering the cavity and comprising;
the plurality of sub-layers, wherein each of the sub-layers has a thickness substantially equal to an odd multiple of the quarter wavelength of the fundamental eigenmode of the BAW resonator; and
a second layer disposed beneath the first layer and the cavity;a first electrode disposed over the cavity; a first piezoelectric layer disposed over the first electrode; a second electrode disposed over the first piezoelectric layer; a second piezoelectric layer disposed over the second electrode; a third electrode disposed over the second piezoelectric layer; a bridge disposed between the first electrode and the third electrode; and an inner raised region disposed over the third electrode, or an outer raised region disposed over the third electrode, or both the inner raised region and the outer raised region. - View Dependent Claims (21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32)
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33. A bulk acoustic wave (BAW) resonator, comprising:
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a cavity provided in a first layer and having a perimeter bordering an active region of the BAW resonator; a distributed Bragg reflector (DBR) bordering the cavity, the DBR comprising the first layer and a second layer, wherein the first layer comprises a low acoustic impedance layer comprising a first layer of silicon carbide and the second layer comprises a high acoustic impedance layer comprising a second layer of silicon carbide; a first electrode disposed over the cavity; a first piezoelectric layer disposed over the first electrode; a second electrode disposed over the first piezoelectric layer; a second piezoelectric layer disposed over the second electrode; a third electrode disposed over the second piezoelectric layer; and a bridge disposed between the first electrode and the third electrode. - View Dependent Claims (34, 35, 36, 37, 38, 39, 40, 41)
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Specification