Semiconductor circuit, D/A converter, mixer circuit, radio communication device, method for adjusting threshold voltage, and method for determining quality of transistor
First Claim
1. A semiconductor circuit comprising:
- a substrate made of a semiconductor in which two diffusion layers each serving as either a source or a drain are formed;
a tunnel oxide film formed on a region of the substrate between the diffusion layers;
a charge storage film formed on the tunnel oxide layer and configured to store charge;
a blocking layer formed between the charge storage film and a gate electrode, the blocking layer having layers of a first oxide film, a nitride film and a second oxide film to have a thickness of 5 nm or larger but 15 nm or smaller; and
a plurality of nodes allowing external application of voltages so that the source and the drain are reversed and allowing detection a gate voltage, a drain current, and a substrate current.
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Accused Products
Abstract
According to an embodiment, a semiconductor circuit includes a substrate, a tunnel oxide film, a charge storage film, a blocking layer, and plural nodes. The substrate is made of a semiconductor in which two diffusion layers each serving as either a source or a drain are formed. The tunnel oxide film is formed on a region of the substrate between the diffusion layers. The charge storage film is formed on the tunnel oxide layer and stores charge. The blocking layer is formed between the charge storage film and a gate electrode and has layers of a first oxide film, a nitride film and a second oxide film to have a thickness of 5 nm or larger but 15 nm or smaller. The nodes allow external application of voltages so that the source and the drain are reversed and allow detection a gate voltage, a drain current and a substrate current.
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Citations
7 Claims
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1. A semiconductor circuit comprising:
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a substrate made of a semiconductor in which two diffusion layers each serving as either a source or a drain are formed; a tunnel oxide film formed on a region of the substrate between the diffusion layers; a charge storage film formed on the tunnel oxide layer and configured to store charge; a blocking layer formed between the charge storage film and a gate electrode, the blocking layer having layers of a first oxide film, a nitride film and a second oxide film to have a thickness of 5 nm or larger but 15 nm or smaller; and a plurality of nodes allowing external application of voltages so that the source and the drain are reversed and allowing detection a gate voltage, a drain current, and a substrate current. - View Dependent Claims (2, 3, 4, 5)
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6. A method for adjusting a threshold voltage of a transistor having a charge storage film between a region of a substrate made of a semiconductor between two diffusion layers formed in the substrate and a gate electrode, the method comprising:
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detecting a gate voltage, a drain voltage and a substrate voltage; determining whether or not a threshold voltage changing with charge stored in the charge storage film has reached a target value and whether or not a total amount of charge flowing through the substrate has reached an upper limit on a basis of the gate voltage, the drain current and the substrate current that are detected; and controlling the substrate current to flow so that charge is stored in the charge storage film until either the target value or the upper limit is determined to be reached.
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7. A method for determining a quality of a transistor having a charge storage film between a region of a substrate made of a semiconductor between two diffusion layers formed in the substrate and a gate electrode, the method comprising:
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detecting a gate voltage, a drain voltage and a substrate voltage; determining whether or not a threshold voltage changing with charge stored in the charge storage film has reached a target value and whether or not a total amount of charge flowing through the substrate has reached an upper limit on a basis of the gate voltage, the drain current and the substrate current that are detected; controlling the substrate current to flow so that charge is stored in the charge storage film until either the target value or the upper limit is determined to be reached; and determining as good quality when the target value is reached before the upper limit is reached but determining as bad quality when the upper limit is reached before the target value is reached.
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Specification