Structure and method for a high-K transformer with capacitive coupling
First Claim
1. A semiconductor device, comprising:
- a semiconductor substrate having an integrated circuit (IC) device;
an interconnect structure disposed on the semiconductor substrate and coupled with the IC device; and
a transformer disposed on the semiconductor substrate and integrated in the interconnect structure, wherein the transformer includes;
a first conductive feature,a second conductive feature inductively coupled with the first conductive feature,a third conductive feature electrically connected to the first conductive feature, anda fourth conductive feature electrically connected to the second conductive feature, wherein the third and fourth conductive features are designed and configured to be capacitively coupled to increase a coupling coefficient of the transformer, andwherein the first conductive feature is electrically connected with first two ports and is further configured to form a first coil element, andwherein the second conductive feature is electrically connected with second two ports and further configured to form a second coil element.
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Abstract
The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor substrate having an integrated circuit (IC) device; an interconnect structure disposed on the semiconductor substrate and coupled with the IC device; and a transformer disposed on the semiconductor substrate and integrated in the interconnect structure. The transformer includes a first conductive feature; a second conductive feature inductively coupled with the first conductive feature; a third conductive feature electrically connected to the first conductive feature; and a fourth conductive feature electrically connected to the second conductive feature. The third and fourth conductive features are designed and configured to be capacitively coupled to increase a coupling coefficient of the transformer.
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Citations
21 Claims
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1. A semiconductor device, comprising:
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a semiconductor substrate having an integrated circuit (IC) device; an interconnect structure disposed on the semiconductor substrate and coupled with the IC device; and a transformer disposed on the semiconductor substrate and integrated in the interconnect structure, wherein the transformer includes; a first conductive feature, a second conductive feature inductively coupled with the first conductive feature, a third conductive feature electrically connected to the first conductive feature, and a fourth conductive feature electrically connected to the second conductive feature, wherein the third and fourth conductive features are designed and configured to be capacitively coupled to increase a coupling coefficient of the transformer, and wherein the first conductive feature is electrically connected with first two ports and is further configured to form a first coil element, and wherein the second conductive feature is electrically connected with second two ports and further configured to form a second coil element. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. An integrated circuit, comprising:
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a transformer disposed on a substrate, including; a first inductive coupling feature having first two ports; a second inductive coupling feature having second two ports; and a first capacitive coupling feature electrically connected to the first inductive coupling feature and having at least first two ends configured to be floating, wherein the first and second inductive coupling features are configured to be inductively coupled, and the first capacitive coupling feature is configured to be capacitively coupled with the second inductive coupling feature. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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19. A circuit device:
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a substrate; a first conductive feature disposed on the substrate; a second conductive feature disposed on the substrate and within the first conductive feature; a third conductive feature disposed on the substrate, wherein the third conductive feature is electrically coupled to the first conductive feature, wherein the third conductive feature is capacitively coupled to the second conductive feature, and wherein the third conductive feature has at least two ends configured to be electrically floating. - View Dependent Claims (20, 21)
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Specification