Device with through-silicon via (TSV) and method of forming the same
First Claim
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1. A method, comprising:
- forming an opening extending from a top surface of a silicon substrate into the silicon substrate to a predetermined depth;
forming an insulation structure on the silicon substrate along the sidewalls and a bottom of the opening; and
forming a conductive layer on the insulation structure to fill the opening;
wherein a first interface between the insulation structure and the silicon substrate has an interface roughness with a peak-to-valley height less than 5 nm, and a second interface between the insulation structure and the conductive layer has an interface roughness with a peak-to-valley height less than 5 nm.
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Abstract
A method includes forming an opening extending from a top surface of a silicon substrate into the silicon substrate to a predetermined depth. The method further includes forming an insulation structure on the silicon substrate along the sidewalls and the bottom of the opening and forming a conductive layer on the insulation structure to fill the opening. A first interface between the insulation structure and the silicon substrate has an interface roughness with a peak-to-valley height less than 5 nm, and a second interface between the insulation structure and the conductive layer has an interface roughness with a peak-to-valley height less than 5 nm.
50 Citations
20 Claims
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1. A method, comprising:
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forming an opening extending from a top surface of a silicon substrate into the silicon substrate to a predetermined depth; forming an insulation structure on the silicon substrate along the sidewalls and a bottom of the opening; and forming a conductive layer on the insulation structure to fill the opening; wherein a first interface between the insulation structure and the silicon substrate has an interface roughness with a peak-to-valley height less than 5 nm, and a second interface between the insulation structure and the conductive layer has an interface roughness with a peak-to-valley height less than 5 nm. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method, comprising:
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forming an opening extending from a top surface of a silicon substrate into the silicon substrate to a predetermined depth; forming a first insulation layer on the silicon substrate along the sidewalls and the bottom of the opening; performing a thermal oxidation process to form a second insulation layer along the sidewalls and the bottom of the opening; and forming a conductive layer over the second insulation layer to fill the opening; wherein an interface between the first insulation layer and the silicon substrate has an interface roughness with a peak-to-valley height less than 5 nm. - View Dependent Claims (13, 14, 15, 16)
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17. A method, comprising:
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forming an opening extending from a top surface of a silicon substrate into the silicon substrate to a predetermined depth; forming an insulation structure on the silicon substrate along the sidewalls and a bottom of the opening, wherein an interface between the insulation structure layer and the silicon substrate has an interface roughness with a peak-to-valley height less than 5 nm; forming a conductive layer over the second insulation layer to fill the opening; thinning the silicon substrate a bottom surface of the silicon substrate opposite the top surface of the silicon substrate; and bonding at least one die to the thinned silicon substrate. - View Dependent Claims (18, 19, 20)
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Specification