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Semiconductor device

  • US 9,087,908 B2
  • Filed: 04/17/2014
  • Issued: 07/21/2015
  • Est. Priority Date: 10/14/2011
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • an oxide semiconductor film over a substrate;

    a source electrode and a drain electrode over the oxide semiconductor film;

    a gate insulating film over the oxide semiconductor film, wherein the gate insulating film comprises an oxide containing silicon; and

    a gate electrode over the gate insulating film,wherein the oxide semiconductor film comprises;

    a first region in which a concentration of silicon is lower than or equal to 1.0 at. %; and

    a pair of second regions, each of the pair of second regions comprising a dopant,wherein the first region is located at an interface between the oxide semiconductor film and the gate insulating film and in contact with the gate insulating film, andwherein the first region comprises a crystal portion.

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