Single-mode quantum cascade lasers with enhanced tuning range
First Claim
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1. A single-mode laser comprising:
- a substrate; and
a cavity formed on the substrate, the cavity comprising an asymmetric Mach-Zehnder (AMZ) interferometer structure positioned between two straight waveguide segments, the straight waveguide segments and first and second arms of the AMZ interferometer structure comprising epitaxial semiconductor layers, wherein the second arm of the AMZ interferometer structure has a temperature control architecture independent of the first arm operable for expanding a single-mode emission tuning range of the single-mode laser, wherein the expanded single-mode emission tuning range covers 20 cm−
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Abstract
In one aspect, semiconductor lasers are provided. A semiconductor laser described herein comprises substrate and a cavity formed on the substrate, the cavity comprising an asymmetric Mach-Zehnder (AMZ) interferometer structure positioned between two straight waveguide segments, the straight waveguide segments and first and second arms of the AMZ interferometer structure comprising epitaxial semiconductor layers, wherein the second arm of the AMZ interferometer structure has a temperature control architecture independent of the first arm.
32 Citations
23 Claims
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1. A single-mode laser comprising:
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a substrate; and a cavity formed on the substrate, the cavity comprising an asymmetric Mach-Zehnder (AMZ) interferometer structure positioned between two straight waveguide segments, the straight waveguide segments and first and second arms of the AMZ interferometer structure comprising epitaxial semiconductor layers, wherein the second arm of the AMZ interferometer structure has a temperature control architecture independent of the first arm operable for expanding a single-mode emission tuning range of the single-mode laser, wherein the expanded single-mode emission tuning range covers 20 cm−
1. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method of tuning laser emission comprising:
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providing a single-mode semiconductor laser including a substrate and a cavity formed on the substrate, the cavity comprising an asymmetric Mach-Zehnder (AMZ) interferometer structure positioned between two straight waveguide segments, the straight waveguide segments and first and second arms of the AMZ interferometer structure comprising epitaxial semiconductor layers, wherein the second arm of the AMZ interferometer structure has a temperature control architecture independent of the first arm; and changing temperature of the second arm independently from the first arm to alter single-mode emission wavelength over a range of 20 cm−
1. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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Specification