Electronic device

• US 9,090,457 B2
• Filed: 03/14/2013
• Issued: 07/28/2015
• Est. Priority Date: 04/27/2012
• Status: Expired due to Fees

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Yamazaki, Hiroaki
• Primary Examiner(s): Pizarro, Marco D
• Assistant Examiner(s): GARCES, NELSON Y
• Application Number:
  US13/830,451
• Publication Number:
  US 20130285122A1
• Time in Patent Office: 866 Days
• US Class Current: 1/1
• CPC Class Codes: B81B 3/0018 Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
• CPC Class Codes: B81B 3/0086 Electrical characteristics, e.g. reducing driving voltage, improving resistance to peak voltage
• CPC Class Codes: B81C 1/00246 Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
• CPC Class Codes: B81C 2203/0735 Post-CMOS, i.e. forming the micromechanical structure after the CMOS circuit
• CPC Class Codes: B81C 2203/0771 Stacking the electronic processing unit and the micromechanical structure
• CPC Class Codes: H01L 28/20 Resistors
• CPC Class Codes: H01L 29/84 controllable by variation of applied mechanical force, e.g. of pressure

Abstract

According to one embodiment, an electronic device includes a drive circuit on a semiconductor substrate, an insulating region including a first insulating part provided on the semiconductor substrate and formed of interlayer insulating films, and a second insulating part provided on the first insulating part, an element for a high-frequency provided on the insulating region and driven by the drive circuit, an interconnect including a first conductive part in the first insulating part, and a second conductive part in the second insulating part, and transmitting a drive signal from the drive circuit to the element, a first shield provided inside the insulating region and below the element, and a second shield provided inside the insulating region and below the second conductive part.

Claims

1. An electronic device comprising:

a semiconductor substrate;

a drive circuit provided on the semiconductor substrate;

an insulating region including a first insulating part provided on the semiconductor substrate and formed of a plurality of interlayer insulating films, and a second insulating part provided on the first insulating part, the insulating region being configured to cover the drive circuit;

an element for a high-frequency application provided on the insulating region and driven by the drive circuit;

an interconnect including a first conductive part provided in the first insulating part, and a second conductive part provided in the second insulating part, wherein a pattern of the second conductive part is positioned outside a region in which the element is provided when viewed from a direction perpendicular to a surface of the semiconductor substrate, and wherein the interconnect is provided between the drive circuit and the element and is configured to transmit a drive signal from the drive circuit to the element;

a first shield provided at a position inside the insulating region and below the element; and

a second shield provided at a position inside the insulating region and below the second conductive part;

wherein the second conductive part is provided in a via hole formed in the second insulating part; and

wherein an entirety of the pattern of the second conductive part is positioned inside a pattern of the second shield when viewed from the direction perpendicular to the surface of the semiconductor substrate.

2. The device of claim 1, wherein the second shield is provided in the first insulating part and is not provided on the first insulating part.

3. The device of claim 2, wherein at least a part of the first shield is provided on the first insulating part.

4. The device of claim 2, wherein the second shield is provided on the lowermost one of the interlayer insulating films.

5. The device of claim 1, wherein the first shield and the second shield are electrically connected to each other.

6. The device of claim 1, wherein the second shield is connected to an RF ground.

7. The device of claim 1, wherein the second insulating part is thicker than each of the plurality of interlayer insulating films.

8. The device of claim 1, wherein the interconnect further includes a third conductive part provided on the second insulating part.

9. The device of claim 1, further comprising a resistive element provided above the semiconductor substrate and configured to prevent a high-frequency component from leaking from the element into the drive circuit.

10. The device of claim 1, wherein the element is a MEMS element.

11. The device of claim 10, wherein the MEMS element is a variable capacitor element.

12. The device of claim 1, wherein the drive circuit includes a CMOS circuit.

13. The device of claim 1, wherein the second shield includes a part thereof formed on one of the interlayer insulating films and a part thereof formed on another of the interlayer insulating films.

14. The device of claim 1, wherein the drive circuit is positioned outside the region in which the element is provided when viewed from the direction perpendicular to the surface of the semiconductor substrate.

15. The device of claim 1, wherein the element is positioned inside a pattern of the first shield when viewed from the direction perpendicular to the surface of the semiconductor substrate.

16. The device of claim 1, wherein at least a part of the first shield is provided on the first insulating part, and the first conductive part is further provided on the first insulating part.