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Three-dimensional memory comprising discrete read/write-voltage generator die

  • US 9,093,153 B2
  • Filed: 09/15/2014
  • Issued: 07/28/2015
  • Est. Priority Date: 09/01/2011
  • Status: Active Grant
First Claim
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1. A discrete three-dimensional memory (3D-M), comprising:

  • a 3D-array die comprising at least a 3D-M array including a plurality of vertically stacked memory cells;

    a peripheral-circuit die comprising at least a portion of a read/write-voltage generator for providing said 3D-array die with at least a read voltage and/or a write voltage other than the voltage supply, wherein said portion of said read/write-voltage generator is absent from said 3D-array die;

    wherein said peripheral-circuit die comprises fewer back-end layers than said 3D-array die; and

    , said 3D-array die and said peripheral-circuit die are separate dice.

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