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Nonvolatile memory device and related method of programming

  • US 9,093,157 B2
  • Filed: 11/07/2012
  • Issued: 07/28/2015
  • Est. Priority Date: 03/14/2012
  • Status: Active Grant
First Claim
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1. A method of programming a nonvolatile memory device comprising a plurality of cell strings formed on a substrate, each of the cell strings comprising at least one ground selection transistor, a plurality of memory cells, and at least one string selection transistor stacked in a direction perpendicular to the substrate, the method comprising:

  • applying a negative voltage to a selected word line connected to a selected memory cell in one of the cell strings and to unselected word lines connected to unselected memory cells in the one of the cell strings;

    applying a pass voltage to the selected word line and the unselected word lines after applying the negative voltage to the selected word line and the unselected word lines; and

    applying a program voltage to the selected word line while continuing to apply the pass voltage to the unselected word lines.

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