Nonvolatile memory device and related method of programming
First Claim
1. A method of programming a nonvolatile memory device comprising a plurality of cell strings formed on a substrate, each of the cell strings comprising at least one ground selection transistor, a plurality of memory cells, and at least one string selection transistor stacked in a direction perpendicular to the substrate, the method comprising:
- applying a negative voltage to a selected word line connected to a selected memory cell in one of the cell strings and to unselected word lines connected to unselected memory cells in the one of the cell strings;
applying a pass voltage to the selected word line and the unselected word lines after applying the negative voltage to the selected word line and the unselected word lines; and
applying a program voltage to the selected word line while continuing to apply the pass voltage to the unselected word lines.
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Abstract
A three-dimensional nonvolatile memory device comprises a plurality of cell strings arranged perpendicular to a substrate. The nonvolatile memory device is programmed by identifying a selected word line and a plurality of unselected word lines connected to at least one of the cell stings, and sequentially applying a negative voltage and a pass voltage to the selected and unselected word lines, and then applying a program voltage to the selected word line while continuing to apply the pass voltage to the unselected word lines.
21 Citations
20 Claims
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1. A method of programming a nonvolatile memory device comprising a plurality of cell strings formed on a substrate, each of the cell strings comprising at least one ground selection transistor, a plurality of memory cells, and at least one string selection transistor stacked in a direction perpendicular to the substrate, the method comprising:
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applying a negative voltage to a selected word line connected to a selected memory cell in one of the cell strings and to unselected word lines connected to unselected memory cells in the one of the cell strings; applying a pass voltage to the selected word line and the unselected word lines after applying the negative voltage to the selected word line and the unselected word lines; and applying a program voltage to the selected word line while continuing to apply the pass voltage to the unselected word lines. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A nonvolatile memory device, comprising:
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a plurality of cell strings formed on a substrate, each of the cell strings comprising a plurality of memory cells stacked in a direction perpendicular to the substrate; an address decoder connected to the cell strings via a plurality of word lines; and a read/write circuit connected to the cell strings via a plurality of bit lines, wherein in a program operation, the address decoder is configured to apply a negative voltage to the plurality of word lines connected to one of the cell strings and to then apply a program voltage to a selected word line among the plurality of word lines. - View Dependent Claims (14, 15, 16)
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17. A method of programming a three-dimensional nonvolatile memory device comprising a plurality of cell strings arranged perpendicular to a substrate, comprising:
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identifying a selected word line and a plurality of unselected word lines connected to at least one of the cell stings; and sequentially applying a negative voltage and a pass voltage to the selected word line and the unselected word lines, and then applying a program voltage to the selected word line while continuing to apply the pass voltage to the unselected word lines. - View Dependent Claims (18, 19, 20)
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Specification