Method for manufacturing semiconductor device
First Claim
1. A method for manufacturing a semiconductor device comprising the steps of:
- forming an oxide semiconductor layer over a substrate in a deposition chamber;
performing a heat treatment on the oxide semiconductor layer in an inert atmosphere or under a reduced pressure; and
supplying oxygen to the oxide semiconductor layer in an atmosphere containing oxygen,wherein a hydrogen concentration of the oxide semiconductor layer is reduced during the heat treatment, andwherein moisture in the deposition chamber is removed during the step of forming the oxide semiconductor layer.
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Abstract
An object is to provide a semiconductor device having stable electric characteristics in which an oxide semiconductor is used. An oxide semiconductor layer is subjected to heat treatment for dehydration or dehydrogenation treatment in a nitrogen gas or an inert gas atmosphere such as a rare gas (e.g., argon or helium) or under reduced pressure and to a cooling step for treatment for supplying oxygen in an atmosphere of oxygen, an atmosphere of oxygen and nitrogen, or the air (having a dew point of preferably lower than or equal to −40° C., still preferably lower than or equal to −50° C.) atmosphere. The oxide semiconductor layer is thus highly purified, whereby an i-type oxide semiconductor layer is formed. A semiconductor device including a thin film transistor having the oxide semiconductor layer is manufactured.
203 Citations
21 Claims
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1. A method for manufacturing a semiconductor device comprising the steps of:
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forming an oxide semiconductor layer over a substrate in a deposition chamber; performing a heat treatment on the oxide semiconductor layer in an inert atmosphere or under a reduced pressure; and supplying oxygen to the oxide semiconductor layer in an atmosphere containing oxygen, wherein a hydrogen concentration of the oxide semiconductor layer is reduced during the heat treatment, and wherein moisture in the deposition chamber is removed during the step of forming the oxide semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method for manufacturing a semiconductor device comprising the steps of:
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forming an oxide semiconductor layer over a substrate in a deposition chamber; performing a heat treatment on the oxide semiconductor layer in an inert atmosphere or under a reduced pressure in a treatment chamber; and supplying oxygen to the oxide semiconductor layer by introducing a gas containing oxygen into the treatment chamber, wherein a hydrogen concentration of the oxide semiconductor layer is reduced during the heat treatment, and wherein moisture in the deposition chamber is removed during the step of forming the oxide semiconductor layer. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A method for manufacturing a semiconductor device comprising the steps of:
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forming an oxide semiconductor layer over a substrate in a deposition chamber; performing a heat treatment on the oxide semiconductor layer in an inert atmosphere or under a reduced pressure in a first treatment chamber and then moving the substrate into a second treatment chamber; and supplying oxygen to the oxide semiconductor layer in an atmosphere containing oxygen in the second treatment chamber, wherein a hydrogen concentration of the oxide semiconductor layer is reduced during the heat treatment, and wherein moisture in the deposition chamber is removed during the step of forming the oxide semiconductor layer. - View Dependent Claims (16, 17, 18, 19, 20, 21)
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Specification