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Semiconductor device having an oxide semiconductor with a crystalline region and manufacturing method thereof

  • US 9,093,328 B2
  • Filed: 11/03/2010
  • Issued: 07/28/2015
  • Est. Priority Date: 11/06/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first transistor over a substrate; and

    a second transistor over the substrate, the first transistor and the second transistor each comprising;

    a first electrode layer;

    a first insulating film over the first electrode layer;

    an oxide semiconductor layer over the first insulating film, the oxide semiconductor layer comprising indium, zinc, and one or more metal elements selected from gallium, aluminum, manganese, cobalt, and tin;

    a second electrode layer on the oxide semiconductor layer, the second electrode layer having a first end portion overlapping with the first electrode layer;

    a third electrode layer on the oxide semiconductor layer, the third electrode layer having a second end portion overlapping with the first electrode layer;

    a second insulating film including an oxide insulating film, the oxide insulating film in contact with the second electrode layer, the third electrode layer, and the oxide semiconductor layer; and

    a fourth electrode layer over the first electrode layer with at least the oxide semiconductor layer and the second insulating film interposed therebetween,wherein the first electrode layer of the second transistor has an edge portion overlapping with the oxide semiconductor layer of the second transistor,wherein the oxide semiconductor layer of the second transistor has an edge portion overlapping with the first electrode layer of the second transistor,wherein the fourth electrode layer of the second transistor is in contact with the second electrode layer of the second transistor in a region in which the first electrode layer of the second transistor overlaps the second electrode layer of the second transistor,wherein a first region including a surface portion of the oxide semiconductor layer comprises a crystalline region comprising crystals, andwherein c-axes of the crystals are oriented substantially in a direction perpendicular to the surface portion of the oxide semiconductor layer.

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