Semiconductor device and manufacturing method thereof
First Claim
1. A semiconductor device comprising:
- a gate electrode layer;
a gate insulating layer;
an oxide semiconductor layer comprising a channel formation region adjacent to the gate electrode layer with the gate insulating layer therebetween; and
source and drain electrode layers in electrical contact with the oxide semiconductor layer,wherein the oxide semiconductor layer comprising a crystalline region including crystals with a grain diameter greater than or equal to 1 nm and less than or equal to 20 nm, andwherein c-axes of the crystals are oriented in a direction perpendicular to a surface of the oxide semiconductor layer.
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Abstract
An object of an embodiment of the present invention is to manufacture a semiconductor device with high display quality and high reliability, which includes a pixel portion and a driver circuit portion capable of high-speed operation over one substrate, using transistors having favorable electric characteristics and high reliability as switching elements. Two kinds of transistors, in each of which an oxide semiconductor layer including a crystalline region on one surface side is used as an active layer, are formed in a driver circuit portion and a pixel portion. Electric characteristics of the transistors can be selected by choosing the position of the gate electrode layer which determines the position of the channel. Thus, a semiconductor device including a driver circuit portion capable of high-speed operation and a pixel portion over one substrate can be manufactured.
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Citations
20 Claims
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1. A semiconductor device comprising:
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a gate electrode layer; a gate insulating layer; an oxide semiconductor layer comprising a channel formation region adjacent to the gate electrode layer with the gate insulating layer therebetween; and source and drain electrode layers in electrical contact with the oxide semiconductor layer, wherein the oxide semiconductor layer comprising a crystalline region including crystals with a grain diameter greater than or equal to 1 nm and less than or equal to 20 nm, and wherein c-axes of the crystals are oriented in a direction perpendicular to a surface of the oxide semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor device comprising:
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a gate electrode layer; a gate insulating layer; an oxide semiconductor layer comprising a channel formation region adjacent to the gate electrode layer with the gate insulating layer therebetween, and source and drain electrode layers in electrical contact with the oxide semiconductor layer; wherein the oxide semiconductor layer comprises a first crystalline region including crystals whose c-axes are oriented in a direction perpendicular to a surface of the oxide semiconductor layer in a superficial portion of the oxide semiconductor layer and a second crystalline region including microcrystals, and wherein a grain diameter of the crystals in the first crystalline region is greater than or equal to 1 nm and less than or equal to 20 nm. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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17. A display device comprising:
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a pixel portion including a first transistor over a substrate, wherein the first transistor comprises; a first gate electrode layer; a first gate insulating layer; a first oxide semiconductor layer comprising a channel formation region adjacent to the first gate electrode layer with the first gate insulating layer therebetween; and first source and drain electrode layers in electrical contact with the first oxide semiconductor layer, wherein the first oxide semiconductor layer comprising a crystalline region with a grain diameter greater than or equal to 1 nm and less than or equal to 20 nm, and wherein the crystalline region in the first oxide semiconductor layer includes crystals whose c-axes are oriented in a direction perpendicular to a surface of the first oxide semiconductor layer. - View Dependent Claims (18, 19, 20)
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Specification