Integrated circuits having a plurality of high-K metal gate FETs with various combinations of channel foundation structure and gate stack structure and methods of making same
First Claim
Patent Images
1. A method of forming an integrated circuit, comprising:
- forming, in a substrate, an NFET channel foundation, a PFET channel foundation, a DDC-NFET channel foundation, and a DDC-PFET channel foundation; and
disposing an NFET gate stack having a first set of material layers disposed in a first order over the NFET channel foundation, disposing a PFET gate stack having a second set of material layers disposed in a second order over the PFET channel foundation, disposing a DDC-NFET gate stack having a third set of material layers disposed in a third order over the DDC-NFET channel foundation, and disposing a DDC-PFET gate stack having a fourth set of material layers disposed in a fourth order over the DDC-PFET channel foundation;
wherein the third set of materials layers is the same as the fourth set of material layers, and the third order is the same as the fourth order;
wherein the first set of material layers, and the second set of material layers are different from each other; and
wherein each of the DDC-NFET and DDC-PFET channel foundations include at least a screening layer and an undoped epi layer disposed over the screening layer.
3 Assignments
0 Petitions
Accused Products
Abstract
Semiconductor manufacturing processes include forming conventional channel field effect transistors (FETs) and deeply depleted channel (DDC) FETs on the same substrate and selectively forming a plurality of gate stack types where those different gate stack types are assigned to and formed in connection with one or more of a conventional channel NFET, a conventional channel PFET, a DDC-NFET, and a DDC-PFET in accordance a with a predetermined pattern.
-
Citations
9 Claims
-
1. A method of forming an integrated circuit, comprising:
-
forming, in a substrate, an NFET channel foundation, a PFET channel foundation, a DDC-NFET channel foundation, and a DDC-PFET channel foundation; and disposing an NFET gate stack having a first set of material layers disposed in a first order over the NFET channel foundation, disposing a PFET gate stack having a second set of material layers disposed in a second order over the PFET channel foundation, disposing a DDC-NFET gate stack having a third set of material layers disposed in a third order over the DDC-NFET channel foundation, and disposing a DDC-PFET gate stack having a fourth set of material layers disposed in a fourth order over the DDC-PFET channel foundation; wherein the third set of materials layers is the same as the fourth set of material layers, and the third order is the same as the fourth order; wherein the first set of material layers, and the second set of material layers are different from each other; and wherein each of the DDC-NFET and DDC-PFET channel foundations include at least a screening layer and an undoped epi layer disposed over the screening layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
-
Specification