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Methods for plasma processing

  • US 9,096,933 B2
  • Filed: 04/15/2014
  • Issued: 08/04/2015
  • Est. Priority Date: 07/08/2009
  • Status: Active Grant
First Claim
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1. A method for plasma-based deposition of thin films on a substrate, said method comprising:

  • providing a chamber, connecting it to a vacuum pump and maintaining a gas pressure in a range of 50 Pascals to 2000 Pascals in said chamber;

    positioning a plurality of electrodes within said chamber whose lengths are greater than their width or height, so that a first gap is formed between at least two said electrodes; and

    positioning a support for substrates so that said electrodes have a front side facing said support, the lengths extending parallel to a plane defined by said support;

    placing a substrate on said support such that a side of said substrate to be coated faces said electrodes, and such that the minimum gap between a said electrode and said supported substrate on said support is less than the electrode width and less than four times the minimum size of said first gap;

    maintaining said substrate at a temperature less than 200°

    C.;

    injecting a first gas into said first gap between opposing faces of said electrodes to flow towards said substrate;

    providing AC power to at least one of said electrodes to form a plasma by activating said first gas in the space between said electrodes and forming a plasma between said electrode and substrate providing ion bombardment of said substrate;

    injecting a second gas from within at least one of said electrodes into said flowing activated first gas to form a mixed gas; and

    wherein said mixed gas flows adjacent said front side of said electrode without recirculation to deposit said thin film on said substrate and then flows to an exhaust.

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