Sensing devices and methods
First Claim
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1. A sensing device, comprising:
- a first surface acoustic wave (SAW) component, wherein the first SAW component is a temperature component and wherein silicon dioxide (SiO2) is formed only on one surface of an interdigitated transducer (IDT) of the first SAW component;
a second SAW component, wherein the second SAW component is a humidity component and wherein silicon dioxide (SiO2) is formed only on one surface of an interdigitated transducer (IDT) of the second SAW component;
a third SAW component, wherein the third SAW component is a temperature reference component and wherein silicon dioxide (SiO2) is formed only on one surface of an interdigitated transducer (IDT) of the third SAW component; and
a piezoelectric layer, wherein the first SAW component, the second SAW component, and the third SAW component are on a surface of the piezoelectric layer.
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Abstract
Embodiments of the present disclosure include devices and methods for humidity and temperature sensing. For example, in one embodiment, a sensing device can include a first surface acoustic wave (SAW) component, wherein the first SAW component is a temperature component, a second SAW component, wherein the second SAW component is a humidity component, a third SAW component, wherein the third SAW component is a reference component, and a piezoelectric layer, wherein the first SAW component, the second SAW component, and the third SAW component are on a surface of the piezoelectric layer.
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Citations
9 Claims
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1. A sensing device, comprising:
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a first surface acoustic wave (SAW) component, wherein the first SAW component is a temperature component and wherein silicon dioxide (SiO2) is formed only on one surface of an interdigitated transducer (IDT) of the first SAW component; a second SAW component, wherein the second SAW component is a humidity component and wherein silicon dioxide (SiO2) is formed only on one surface of an interdigitated transducer (IDT) of the second SAW component; a third SAW component, wherein the third SAW component is a temperature reference component and wherein silicon dioxide (SiO2) is formed only on one surface of an interdigitated transducer (IDT) of the third SAW component; and a piezoelectric layer, wherein the first SAW component, the second SAW component, and the third SAW component are on a surface of the piezoelectric layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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Specification