Memory system and method of operating memory system using reconstructed data
First Claim
1. A method of operating a memory system, the method comprising:
- programming first bit data into a plurality of memory cells;
identifying target memory cells that are in a first state and have threshold voltages equal to or greater than a first voltage from the plurality of memory cells programmed with the first bit data;
receiving second bit data which is to be programmed into the plurality of memory cells;
calculating a plurality of third bit data by performing a first process on the second bit data;
selecting third bit data of the calculated plurality of third bit data that changes a largest number of target memory cells from the first state to a second state when the memory cells are programmed with each of the plurality of third bit data, respectively; and
programming the selected third bit data into the memory cells.
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Abstract
Provided is a method of operating a memory system. The method includes programming first bit data into multiple memory cells; identifying target memory cells that are in a first state and have threshold voltages equal to or greater than a first voltage from the memory cells programmed with the first bit data; receiving second bit data which is to be programmed into the memory cells; calculating multiple third bit data by performing a first process on the second bit data; and selecting third bit data of the calculated multiple third bit data that changes a largest number of target memory cells from the first state to a second state when the memory cells are programmed with each of the multiple third bit data, respectively. The selected third bit data is programmed into the memory cells.
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Citations
20 Claims
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1. A method of operating a memory system, the method comprising:
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programming first bit data into a plurality of memory cells; identifying target memory cells that are in a first state and have threshold voltages equal to or greater than a first voltage from the plurality of memory cells programmed with the first bit data; receiving second bit data which is to be programmed into the plurality of memory cells; calculating a plurality of third bit data by performing a first process on the second bit data; selecting third bit data of the calculated plurality of third bit data that changes a largest number of target memory cells from the first state to a second state when the memory cells are programmed with each of the plurality of third bit data, respectively; and programming the selected third bit data into the memory cells. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A memory system, comprising:
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a nonvolatile memory device comprising a plurality of memory cells; an input/output (I/O) device configured to receive first bit data and second bit data which are to be programmed into the memory cells; and a controller configured to control the nonvolatile memory device, wherein the nonvolatile memory device comprises control logic configured to identify target memory cells from the memory cells programmed with the first bit data, the target memory cells being in a first state and having threshold voltages equal to or greater than a first voltage, and wherein the controller comprises; a read-only memory (ROM) configured to store a plurality of masks; a microprocessor configured to calculate a plurality of third bit data by performing a first operation on the second bit data with the plurality of masks, respectively; a random-access memory (RAM) configured to store the plurality of third bit data calculated by the microprocessor; and a counter configured to count a number of target memory cells which change from the first state to a second state when the memory cells are programmed with each of the plurality of third bit data, and to provide counting results to the microprocessor, the microprocessor being further configured to select third bit data of the plurality of third bit data which produces a largest counting result, and to program the selected third bit data into the nonvolatile memory device. - View Dependent Claims (13, 14, 15)
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16. A method of operating a memory system, the method comprising:
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programming first bit data into a plurality of memory cells; splitting the first bit data into a plurality of first data segments; identifying target memory cells that are in a first state and have threshold voltages equal to or greater than a first voltage from the plurality of memory cells programmed with the first data segments; receiving second bit data which is to be programmed into the plurality of memory cells; splitting the second bit data into a plurality of second data segments; calculating a plurality of third data segments for each of the plurality of second data segments by performing a first process on the corresponding second data segment; selecting a third data segment of the plurality of third data segments that changes a largest number of target memory cells from the first state to a second state within each of the plurality of second data segments, respectively, to provide a plurality of selected third data segments; combining the plurality of selected third data segments into third bit data; and programming the third bit data into the plurality of memory cells. - View Dependent Claims (17, 18, 19, 20)
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Specification