Using different programming modes to store data to a memory cell
First Claim
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1. An apparatus comprising:
- a memory cell having a plurality of available programming states to accommodate multi-level cell (MLC) programming; and
a control circuit which stores only a single bit logical value to the memory cell using single level cell (SLC) programming to provide a first read margin between first and second available programming states, and which subsequently stores only a single bit logical value to the memory cell using virtual multi-level cell (VMLC) programming to provide a larger, second read margin between the first available programming state and a third available programming state.
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Abstract
Method and apparatus for managing data in a memory, such as a flash memory array. In accordance with some embodiments, a memory cell is provided with a plurality of available programming states to accommodate multi-level cell (MLC) programming. A control circuit stores a single bit logical value to the memory cell using single level cell (SLC) programming to provide a first read margin between first and second available programming states. The control circuit subsequently stores a single bit logical value to the memory cell using virtual multi-level cell (VMLC) programming to provide a larger, second read margin between the first available programming state and a third available programming state.
11 Citations
20 Claims
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1. An apparatus comprising:
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a memory cell having a plurality of available programming states to accommodate multi-level cell (MLC) programming; and a control circuit which stores only a single bit logical value to the memory cell using single level cell (SLC) programming to provide a first read margin between first and second available programming states, and which subsequently stores only a single bit logical value to the memory cell using virtual multi-level cell (VMLC) programming to provide a larger, second read margin between the first available programming state and a third available programming state. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. An apparatus comprising:
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a memory cell having sequential first, second, third and fourth available programming states to accommodate the storage of one or more bits to the memory cell, each bit having an associated logical value; and a control circuit adapted to alternately store a single bit to the memory cell using single level cell (SLC) programming, multiple bits to the memory cell using multi-level cell (MLC) programming, and a single bit to the memory cell using virtual multi-level cell (VMLC) programming, wherein the SLC programming uses the first and third available programming states to alternately indicate the associated logical value of the stored single bit, wherein the MLC programming uses the first, second, third and fourth available programming states to alternately indicate the associated logical values of the stored multiple bits, and the VMLC programming uses the first and fourth available programming states to alternately indicate the associated logical value of the stored single bit. - View Dependent Claims (13, 14, 15, 16, 17, 18)
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19. A method comprising:
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providing a memory cell having a plurality of available programming states to accommodate the storage of one or more bits to the memory cell, each bit having an associated logical value; storing a single bit having an associated logical value to the memory cell using single level cell (SLC) programming to provide a first read margin between first and second available programming states of said plurality; and storing a single bit having an associated logical value to the memory cell using virtual multi-level cell (VMLC) programming having a larger, second read margin between the first available programming state and a third available programming state of said plurality. - View Dependent Claims (20)
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Specification