Method for manufacturing semiconductor device
First Claim
1. A method for manufacturing a semiconductor device comprising the steps of:
- forming a first insulating film;
performing a first oxygen addition on the first insulating film under a first condition;
performing a second oxygen addition on the first insulating film subjected to the first oxygen addition, under a second condition; and
forming an oxide semiconductor film over the first insulating film subjected to the second oxygen addition,wherein the first oxygen addition and the second oxygen addition are performed by an ion implantation method or an ion doping method, andwherein an acceleration voltage of the first condition and an acceleration voltage of the second condition are different from each other.
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Abstract
Oxygen vacancies in an oxide semiconductor film and the vicinity of the oxide semiconductor film are reduced and electric characteristics of a transistor including the oxide semiconductor film are improved. Further, a highly reliable semiconductor device including the transistor including the oxide semiconductor film is provided. In the transistor including the oxide semiconductor film, at least one insulating film in contact with the oxide semiconductor film contains excess oxygen. By the excess oxygen included in the insulating film in contact with the oxide semiconductor film, oxygen vacancies in the oxide semiconductor film and the vicinity of the oxide semiconductor film can be reduced. Note that the insulating film including the excess oxygen has a profile of the excess oxygen concentration having two or more local maximum values in the depth direction.
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Citations
15 Claims
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1. A method for manufacturing a semiconductor device comprising the steps of:
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forming a first insulating film; performing a first oxygen addition on the first insulating film under a first condition; performing a second oxygen addition on the first insulating film subjected to the first oxygen addition, under a second condition; and forming an oxide semiconductor film over the first insulating film subjected to the second oxygen addition, wherein the first oxygen addition and the second oxygen addition are performed by an ion implantation method or an ion doping method, and wherein an acceleration voltage of the first condition and an acceleration voltage of the second condition are different from each other. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for manufacturing a semiconductor device comprising the steps of:
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forming an insulating film; performing a first oxygen addition on the insulating film under a first condition; performing a second oxygen addition on the insulating film subjected to the first oxygen addition, under a second condition; forming an oxide semiconductor film over the insulating film subjected to the second oxygen addition; forming a gate insulating film over the oxide semiconductor film; and forming a gate electrode over the gate insulating film wherein the first oxygen addition and the second oxygen addition are performed by an ion implantation method or an ion doping method, and wherein an acceleration voltage of the first condition and an acceleration voltage of the second condition are different from each other. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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Specification