Semiconductor device and method of fabricating the same
First Claim
Patent Images
1. A display device comprising:
- a pixel electrode over a substrate;
a first insulating film over the pixel electrode;
an alignment film over the first insulating film;
a liquid crystal layer over the alignment film; and
a thin film transistor, the thin film transistor comprising;
a gate electrode over the substrate;
a second insulating film over the gate electrode;
a first semiconductor film over the second insulating film;
a second semiconductor film comprising an impurity element which imparts n-type conductivity,a first electrode over the second semiconductor film; and
a second electrode over the second semiconductor film,wherein the pixel electrode comprises a transparent conductive material and is electrically connected to the first electrode,wherein the first insulating film is over the first semiconductor film and is in contact with the first semiconductor film,wherein the alignment film is in contact with the first insulating film,wherein the liquid crystal layer is in contact with the alignment film,wherein the second semiconductor film is in contact with the first semiconductor film and the first electrode,wherein the first electrode and the second electrode comprise a metal layer,wherein the pixel electrode overlaps with the second insulating film,wherein the gate electrode is electrically connected to a terminal portion, andwherein the terminal portion is formed in an edge portion of the substrate.
0 Assignments
0 Petitions
Accused Products
Abstract
A display device includes a main body, a support stand, and a display portion. The display portion includes a pixel having a TFT and a capacitor. The capacitor includes a capacitor electrode on an insulating surface, an insulating film on the capacitor electrode, and a pixel electrode of the TFT on the insulating film.
279 Citations
48 Claims
-
1. A display device comprising:
-
a pixel electrode over a substrate; a first insulating film over the pixel electrode; an alignment film over the first insulating film; a liquid crystal layer over the alignment film; and a thin film transistor, the thin film transistor comprising; a gate electrode over the substrate; a second insulating film over the gate electrode; a first semiconductor film over the second insulating film; a second semiconductor film comprising an impurity element which imparts n-type conductivity, a first electrode over the second semiconductor film; and a second electrode over the second semiconductor film, wherein the pixel electrode comprises a transparent conductive material and is electrically connected to the first electrode, wherein the first insulating film is over the first semiconductor film and is in contact with the first semiconductor film, wherein the alignment film is in contact with the first insulating film, wherein the liquid crystal layer is in contact with the alignment film, wherein the second semiconductor film is in contact with the first semiconductor film and the first electrode, wherein the first electrode and the second electrode comprise a metal layer, wherein the pixel electrode overlaps with the second insulating film, wherein the gate electrode is electrically connected to a terminal portion, and wherein the terminal portion is formed in an edge portion of the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
-
-
20. A display device comprising:
-
a pixel electrode over a substrate; a first insulating film over the pixel electrode; an alignment film over the first insulating film; a liquid crystal layer over the alignment film; and a thin film transistor, the thin film transistor comprising; a gate electrode over the substrate; a second insulating film over the gate electrode; a first semiconductor film over the second insulating film; a second semiconductor film comprising an impurity element which imparts n-type conductivity, a first electrode over the second semiconductor film; and a second electrode over the second semiconductor film, wherein the pixel electrode comprises a transparent conductive material and is electrically connected to the first electrode, wherein the first insulating film is over the first semiconductor film and is in contact with the first semiconductor film, wherein the alignment film is in contact with the first insulating film, wherein the liquid crystal layer is in contact with the alignment film, wherein the second semiconductor film is in contact with the first semiconductor film and the first electrode, wherein the first electrode and the second electrode comprise a metal layer, wherein the pixel electrode overlaps with the second insulating film, wherein the gate electrode is electrically connected to a terminal portion, wherein the terminal portion is formed in an edge portion of the substrate, wherein the pixel electrode consists of a first region and a second region, wherein the pixel electrode is in contact with the first electrode in the whole area of the first region, wherein the pixel electrode does not overlap with the first electrode in the whole area of the second region, and wherein an interlayer insulator is not provided between the pixel electrode and the first electrode in the whole area of the first region. - View Dependent Claims (21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35)
-
-
36. A display device comprising:
-
a pixel electrode over a substrate; a first insulating film over the pixel electrode; an alignment film over the first insulating film; a liquid crystal layer over the alignment film; and a thin film transistor, the thin film transistor comprising; a gate electrode over the substrate; a second insulating film over the gate electrode; a first semiconductor film over the second insulating film; a second semiconductor film comprising an impurity element which imparts n-type conductivity, a first electrode over the second semiconductor film; and a second electrode over the second semiconductor film, wherein the pixel electrode comprises a transparent conductive material and is electrically connected to the first electrode, wherein the first insulating film is over the first semiconductor film and is in contact with the first semiconductor film, wherein the liquid crystal layer is in contact with the alignment film, wherein the second semiconductor film is in contact with the first semiconductor film and the first electrode, wherein the first electrode and the second electrode comprise a metal layer, wherein the pixel electrode overlaps with the second insulating film, wherein the gate electrode is electrically connected to a terminal portion, and wherein the terminal portion is formed in an edge portion of the substrate. - View Dependent Claims (37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48)
-
Specification
-
- Resources
Litigation Campaign Assessment
Thank you for your request. You will receive a custom alert email when the Litigation Campaign Assessment is available.
×
-
Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
-
Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
-
InventorsYamazaki, Shunpei, Koyama, Jun, Nakajima, Setsuo
-
Primary Examiner(s)SEFER, AHMED N
-
Application NumberUS13/479,376Publication NumberTime in Patent Office1,167 DaysField of Search257/59, 257/72, 349 38- 39US Class Current1/1CPC Class CodesG02F 1/136231 for reducing the number of ...H01L 27/1214 comprising a plurality of T...H01L 27/1288 employing particular maskin...
