Test method and test arrangement
First Claim
1. A test method, comprising:
- providing a semiconductor device to be tested, the semiconductor device comprising at least one device cell, the at least one device cell comprising at least one trench, at least one first terminal electrode region and at least one second terminal electrode region, at least one gate electrode, and at least one additional electrode disposed at least partially in the at least one trench, wherein an electrical potential of the at least one additional electrode is separately controlled from electrical potentials of the at least one first terminal electrode region, the at least one second terminal electrode region and the at least one gate electrode; and
applying at least one electrical test potential to at least the at least one additional electrode to detect defects in the at least one device cell,wherein a potential of the at least one additional electrode is electrically insulated from potentials of each of the at least one first terminal electrode region, the at least one second terminal electrode region, and the at least one gate electrode.
2 Assignments
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Accused Products
Abstract
A test method in accordance with one or more embodiments may include: providing a semiconductor device to be tested, the semiconductor device including at least one device cell, the at least one device cell having at least one trench, at least one first terminal electrode region and at least one second terminal electrode region, at least one gate electrode, and at least one additional electrode disposed at least partially in the at least one trench, wherein an electrical potential of the at least one additional electrode may be controlled separately from electrical potentials of the at least one first terminal electrode region, the at least one second terminal electrode region and the at least one gate electrode; and applying at least one electrical test potential to at least the at least one additional electrode to detect defects in the at least one device cell.
16 Citations
23 Claims
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1. A test method, comprising:
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providing a semiconductor device to be tested, the semiconductor device comprising at least one device cell, the at least one device cell comprising at least one trench, at least one first terminal electrode region and at least one second terminal electrode region, at least one gate electrode, and at least one additional electrode disposed at least partially in the at least one trench, wherein an electrical potential of the at least one additional electrode is separately controlled from electrical potentials of the at least one first terminal electrode region, the at least one second terminal electrode region and the at least one gate electrode; and applying at least one electrical test potential to at least the at least one additional electrode to detect defects in the at least one device cell, wherein a potential of the at least one additional electrode is electrically insulated from potentials of each of the at least one first terminal electrode region, the at least one second terminal electrode region, and the at least one gate electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A test arrangement, comprising:
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a semiconductor device to be tested, the semiconductor device comprising at least one device cell, the at least one device cell comprising at least one trench, at least one first terminal electrode region, at least one second terminal electrode region, at least one gate electrode, and at least one additional electrode disposed at least partially in the at least one trench, wherein an electrical potential of the at least one additional electrode is controlled separately from electrical potentials of the at least one first terminal electrode region, the at least one second terminal electrode region and the at least one gate electrode; and a test device configured to apply at least one electrical test potential to at least the at least one additional electrode to detect defects in the at least one device cell, wherein a potential of the at least one additional electrode is electrically insulated from potentials of each of the at least one first terminal electrode region, the at least one second terminal electrode region, and the at least one gate electrode.
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17. A test method, comprising:
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providing a semiconductor device to be tested, the semiconductor device comprising at least one device cell, the at least one device cell comprising at least one trench, at least one first terminal electrode region and at least one second terminal electrode region, at least one gate electrode, and at least one additional electrode disposed at least partially in the at least one trench, wherein an electrical potential of the at least one additional electrode is separately controlled from electrical potentials of the at least one first terminal electrode region, the at least one second terminal electrode region and the at least one gate electrode; and applying at least one electrical test potential to at least the at least one additional electrode to detect defects in the at least one device cell, wherein applying at least one test potential to at least the at least one additional electrode comprises carrying out an avalanche test. - View Dependent Claims (18)
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19. A test method, comprising:
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providing a semiconductor device to be tested, the semiconductor device comprising at least one device cell, the at least one device cell comprising at least one trench, at least one first terminal electrode region and at least one second terminal electrode region, at least one gate electrode, and at least one additional electrode disposed at least partially in the at least one trench, wherein an electrical potential of the at least one additional electrode is separately controlled from electrical potentials of the at least one first terminal electrode region, the at least one second terminal electrode region and the at least one gate electrode; and applying at least one electrical test potential to at least the at least one additional electrode to detect defects in the at least one device cell, wherein applying the at least one test potential comprises subjecting the semiconductor device to at least one of a defect density scan and a reliability scan.
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20. A test method, comprising:
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providing a semiconductor device to be tested, the semiconductor device comprising at least one device cell, the at least one device cell comprising at least one trench, at least one first terminal electrode region and at least one second terminal electrode region, at least one gate electrode, and at least one additional electrode disposed at least partially in the at least one trench, wherein an electrical potential of the at least one additional electrode is separately controlled from electrical potentials of the at least one first terminal electrode region, the at least one second terminal electrode region and the at least one gate electrode; and applying at least one electrical test potential to at least the at least one additional electrode to detect defects in the at least one device cell, and analyzing test results obtained by applying the at least one test potential, by means of dynamical part average testing (PAT).
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21. A test method, comprising:
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providing a semiconductor device to be tested, the semiconductor device comprising at least one device cell, the at least one device cell comprising at least one trench, at least one first terminal electrode region and at least one second terminal electrode region, at least one gate electrode, and at least one additional electrode disposed at least partially in the at least one trench, wherein an electrical potential of the at least one additional electrode is separately controlled from electrical potentials of the at least one first terminal electrode region, the at least one second terminal electrode region and the at least one gate electrode; and applying at least one electrical test potential to at least the at least one additional electrode to detect defects in the at least one device cell, wherein the semiconductor device is formed in a semiconductor workpiece, the workpiece comprising a plurality of pads including at least a first pad coupled to the at least one first terminal electrode region, a second pad coupled to the at least one second terminal electrode region, a third pad coupled to the at least one gate electrode and a fourth pad coupled to the at least one additional electrode, and wherein the fourth pad coupled to the at least one additional electrode is electrically insulated from the first to third pads. - View Dependent Claims (22, 23)
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Specification