Semiconductor system, device and structure with heat removal

• US 9,099,424 B1
• Filed: 04/24/2013
• Issued: 08/04/2015
• Est. Priority Date: 08/10/2012
• Status: Expired due to Fees

• Current Assignee: Monolithic 3D, Inc.
• Original Assignee: Monolithic 3D, Inc.
• Inventors: Sekar, Deepak, Or-Bach, Zvi, Cronquist, Brian
• Primary Examiner(s): Nguyen, Cuong Q
• Application Number:
  US13/869,115
• Time in Patent Office: 832 Days
• Field of Search: 257/347, 257/758, 257/686, 257/E23.051, 257/E27.064, 257/712
• US Class Current: 1/1
• CPC Class Codes: H01L 23/3677 Wire-like or pin-like cooling fins or heat sinks
• CPC Class Codes: H01L 23/5225 Shielding layers formed together with wiring layers
• CPC Class Codes: H01L 27/0688 Integrated circuits having a three-dimensional layout
• CPC Class Codes: H01L 27/088 the components being field-effect transistors with insulated gate
• CPC Class Codes: H01L 27/092 complementary MIS field-effect transistors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A mobile system, including: a 3D device, the 3D device including: a first layer of first transistors, overlaid by at least one interconnection layer, where the interconnection layer comprises copper or aluminum; a second layer including second transistors, the second layer overlaying the interconnection layer, the second layer including: a plurality of electrical connections connecting the second transistors with the interconnection layer; and at least one thermally conductive and electrically non-conductive contact, the at least one thermally conductive and electrically non-conductive contact thermally connects the second layer to the top or bottom surface of the 3D device.

Claims

1. A mobile system, comprising:

a 3D device, said 3D device comprising;

a first layer of first transistors, overlaid by at least one interconnection layer, wherein said interconnection layer comprises copper or aluminum;

a second layer comprising second transistors, said second layer overlaying said interconnection layer, said second layer comprising;

a plurality of electrical connections connecting said second transistors with said interconnection layer; and

at least one thermally conductive and electrically non-conductive contact, said at least one thermally conductive and electrically non-conductive contact thermally connects said second layer to the top or bottom surface of said 3D device.

2. A mobile system according to claim 1,

wherein said plurality of electrical connections comprises at least one through-silicon-via, said at least one through-silicon-via comprises tungsten.

3. A mobile system according to claim 1, further comprising:

a heat-spreader layer disposed between said first layer and said second layer.

4. A mobile system according to claim 1, further comprising:

a power distribution network to provide power to said second transistors,

wherein said power distribution network provides a heat removal path between at least one of said second transistors and the top or bottom surface of said 3D device.

5. A mobile system according to claim 1,

wherein said second transistors are aligned to said first transistors.

6. A mobile system according to claim 1, further comprising:

a via through said second layer,

wherein said via is part of a heat removal structure of said device.

7. A mobile system according to claim 1,

wherein said interconnection layer comprises a power grid to provide power to at least one of said second transistors.

8. A system, comprising:

a 3D device, said 3D device comprising;

a first layer of first transistors, overlaid by at least one interconnection layer;

a second layer comprising second transistors, said second layer overlaying said interconnection layer, said second layer comprising;

a plurality of electrical connections connecting said second transistors with said interconnection layer; and

a plurality of thermally conducting paths from said second transistors to the top or bottom surface of said 3D device.

9. A system according to claim 8,

wherein said plurality of electrical connections comprises a through second layer via, and

wherein said second layer has a coefficient of thermal expansion, and

wherein said through said second layer via comprises material whose co-efficient of thermal expansion is within about 50 percent of the coefficient of thermal expansion of said second layer, and

wherein said plurality of electrical connections comprise aluminum or copper wiring.

10. A system according to claim 8, further comprising:

a heat-spreader layer disposed between said first layer and said second layer.

11. A system according to claim 8, further comprising:

a power distribution network to provide power to said second transistors,

wherein said power distribution network provides a heat removal path between at least one of said second transistors and the top or bottom surface of said 3D device.

12. A system according to claim 8,

wherein said second transistors are aligned to said first transistors.

13. A system according to claim 8, further comprising:

at least one thermally conductive and electrically non-conducting contact to said second layer.

14. A system, comprising:

a 3D device, said 3D device comprising;

a first layer of first transistors, overlaid by at least one interconnection layer,

a second layer comprising second transistors, said second layer overlaying said interconnection layer, said second layer comprising;

a plurality of electrical connections connecting said second transistors with said interconnection layer;

said plurality of electrical connections comprising;

a power distribution grid providing power to said second transistors, and

a plurality of thermally conducting paths from said power distribution grid to the top or bottom surface of said 3D device.

15. A system according to claim 14,

wherein said plurality of electrical connections comprises a through said second layer via,

wherein said second layer has a coefficient of thermal expansion, and

wherein said through said second layer via comprises material whose co-efficient of thermal expansion is within about 50 percent of the coefficient of thermal expansion of said second layer, and

wherein said plurality of electrical connections comprise aluminum or copper wiring.

16. A system according to claim 14, further comprising:

a heat-spreader layer disposed between said first layer and said second layer.

17. A system according to claim 14,

wherein said power distribution grid is between said first layer and said second layer.

18. A system according to claim 14,

wherein said second transistors are aligned to said first transistors.

19. A system according to claim 14, further comprising:

at least one thermally conductive and electrically non-conducting contact to said second layer.

20. A system according to claim 14,

wherein said second transistors are Fin-FET type transistors.