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Method for manufacturing semiconductor device

  • US 9,099,499 B2
  • Filed: 11/17/2014
  • Issued: 08/04/2015
  • Est. Priority Date: 04/23/2010
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device, the method comprising:

  • forming an oxide semiconductor film over a substrate, the oxide semiconductor film comprising indium, gallium, and zinc;

    forming a gate insulating film over the oxide semiconductor film;

    doping the gate insulating film with oxygen so that the oxide semiconductor film includes the oxygen; and

    forming a gate electrode over the gate insulating film.

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