Method for manufacturing semiconductor device
First Claim
1. A method for manufacturing a semiconductor device, the method comprising:
- forming an oxide semiconductor film over a substrate, the oxide semiconductor film comprising indium, gallium, and zinc;
forming a gate insulating film over the oxide semiconductor film;
doping the gate insulating film with oxygen so that the oxide semiconductor film includes the oxygen; and
forming a gate electrode over the gate insulating film.
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Abstract
An embodiment of the disclosed invention is a method for manufacturing a semiconductor device, which includes the steps of: forming a first insulating film; performing oxygen doping treatment on the first insulating film to supply oxygen to the first insulating film; forming a source electrode, a drain electrode, and an oxide semiconductor film electrically connected to the source electrode and the drain electrode, over the first insulating film; performing heat treatment on the oxide semiconductor film to remove a hydrogen atom in the oxide semiconductor film; forming a second insulating film over the oxide semiconductor film; and forming a gate electrode in a region overlapping with the oxide semiconductor film, over the second insulating film. The manufacturing method allows the formation of a semiconductor device including an oxide semiconductor, which has stable electrical characteristics and high reliability.
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Citations
19 Claims
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1. A method for manufacturing a semiconductor device, the method comprising:
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forming an oxide semiconductor film over a substrate, the oxide semiconductor film comprising indium, gallium, and zinc; forming a gate insulating film over the oxide semiconductor film; doping the gate insulating film with oxygen so that the oxide semiconductor film includes the oxygen; and forming a gate electrode over the gate insulating film. - View Dependent Claims (2, 3, 4, 5)
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6. A method for manufacturing a semiconductor device, the method comprising:
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forming an oxide semiconductor film over a substrate; forming a first film over the oxide semiconductor film; doping the first film with oxygen; and forming a gate electrode over the first film, wherein the first film comprises a first layer and a second layer over the first layer, wherein the first layer comprises a component included in the oxide semiconductor film, and wherein the second layer comprises a component which is different from the component included in the oxide semiconductor film. - View Dependent Claims (7, 8, 9, 10, 11, 12, 13, 14)
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15. A method for manufacturing a semiconductor device, the method comprising:
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forming an oxide semiconductor film over a substrate; forming a first film over the oxide semiconductor film; doping the first film with oxygen so that the oxide semiconductor film includes the oxygen; and forming a gate electrode over the first film, wherein the first film comprises a first layer and a second layer over the first layer, wherein the first layer comprises a component included in the oxide semiconductor film, and wherein the second layer comprises a component which is different from the component included in the oxide semiconductor film. - View Dependent Claims (16, 17, 18, 19)
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Specification