Microfeature workpieces having interconnects and conductive backplanes, and associated systems and methods
First Claim
1. A method of processing a semiconductor substrate, the semiconductor substrate having integrated circuitry and a plurality of terminals electrically coupled to the integrated circuitry, the method comprising:
- forming a plurality of electrically conductive interconnects extending at least partially through the substrate and in contact with corresponding terminals, the interconnects having back side portions at a back side of the semiconductor substrate;
constructing a conductive backplane at the back side of the semiconductor substrate, wherein constructing a conductive backplane at the back side of the semiconductor substrate comprises depositing a conductive layer onto the back side of the substrate, the conductive layer having openings around the interconnects and dielectric spacers in the openings between the conductive layer and the interconnects; and
electrically coupling at least one of the back side portions of the interconnects to the backplane via a conductive coupler in one of the openings and in direct contact with the corresponding interconnect and the conductive layer, and electrically isolating at least one of the plurality of other interconnects from the backplane.
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Accused Products
Abstract
Microfeature workpieces having interconnects and conductive backplanes and associated systems and methods are disclosed herein. One such device includes a semiconductor substrate having integrated circuitry and terminals electrically coupled to the integrated circuitry. The device also includes electrically conductive interconnects extending through at least a portion of the semiconductor substrate and electrically coupled to corresponding terminals. The device further includes a conductive backplane assembly having a conductive layer at a back side of the semiconductor substrate. One or more of the interconnects are electrically coupled to the conductive layer at the back side of the semiconductor substrate.
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Citations
11 Claims
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1. A method of processing a semiconductor substrate, the semiconductor substrate having integrated circuitry and a plurality of terminals electrically coupled to the integrated circuitry, the method comprising:
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forming a plurality of electrically conductive interconnects extending at least partially through the substrate and in contact with corresponding terminals, the interconnects having back side portions at a back side of the semiconductor substrate; constructing a conductive backplane at the back side of the semiconductor substrate, wherein constructing a conductive backplane at the back side of the semiconductor substrate comprises depositing a conductive layer onto the back side of the substrate, the conductive layer having openings around the interconnects and dielectric spacers in the openings between the conductive layer and the interconnects; and electrically coupling at least one of the back side portions of the interconnects to the backplane via a conductive coupler in one of the openings and in direct contact with the corresponding interconnect and the conductive layer, and electrically isolating at least one of the plurality of other interconnects from the backplane. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of processing a semiconductor substrate having a plurality of microelectronic dies, the individual dies including an integrated circuit and bond-pads electrically coupled to the integrated circuit, the method comprising:
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constructing a plurality of electrically conductive through-substrate interconnects extending at least partially through the semiconductor substrate and in contact with corresponding bond-pads, wherein the plurality of electrically conductive interconnects comprises first interconnects and second interconnects; forming a metal layer at a back side of the semiconductor substrate; and selectively coupling back side portions of the first interconnects of individual dies to the metal layer while keeping the second interconnects of individual dies electrically isolated from the metal layer, wherein selectively coupling the back side portions of the first interconnects to the metal layer comprises placing solder balls in contact with the back side portions of the first interconnects and portions of the metal layer adjacent to the first interconnects. - View Dependent Claims (10, 11)
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Specification