Semiconductor device and manufacturing method thereof

• US 9,099,562 B2
• Filed: 08/17/2009
• Issued: 08/04/2015
• Est. Priority Date: 09/29/2005
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Akimoto, Kengo, Honda, Tatsuya, Sone, Norihito
• Primary Examiner(s): Everhart, Caridad
• Application Number:
  US12/542,068
• Publication Number:
  US 20090305461A1
• Time in Patent Office: 2,178 Days
• Field of Search: 438/E21.471, 438/E21.475, 438/E21.129, 438/E21.347, 438/E21.349, 438/104, 438/799, 257/E21.471, 257/E21.475, 257/E21.129, 257/E21.347, 257/E21.349
• US Class Current: 1/1
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/0217 the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/02178 the material containing aluminium, e.g. Al2O3
• CPC Class Codes: H01L 21/02266 deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02631 Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• CPC Class Codes: H01L 21/02667 Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
• CPC Class Codes: H01L 21/428 using electromagnetic radiation, e.g. laser radiation
• CPC Class Codes: H01L 21/465 Chemical or electrical treatment, e.g. electrolytic etching to form insulating layers H01L21/469
• CPC Class Codes: H01L 21/477 Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering H01L21/38 - H01L21/449 and H01L21/461 - H01L21/475 take precedence
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1285 using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
• CPC Class Codes: H01L 29/04 characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes characterised by physical imperfections H01L29/30
• CPC Class Codes: H01L 29/045 by their particular orientation of crystalline planes
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78693 the semiconducting oxide being amorphous
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621

Abstract

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Claims

1. A method of manufacturing a semiconductor device comprising the steps of:

forming a gate electrode over a substrate;

forming a first insulating film over the gate electrode by using SiH₄ and NH₃ as reaction gases;

forming a second insulating film over the first insulating film by using SiH₄ and N₂O as reaction gases;

forming an oxide semiconductor film over the gate electrode with the first insulating film and the second insulating film interposed therebetween, the oxide semiconductor film including a channel formation region;

forming a source electrode and a drain electrode over the oxide semiconductor film, wherein part of the oxide semiconductor film between the source electrode and the drain electrode is etched, wherein each of the source electrode and the drain electrode comprises a tungsten layer;

forming a protective film comprising silicon oxide over the oxide semiconductor film, the source electrode and the drain electrode; and

forming a third insulating film over the oxide semiconductor film and the protective film, the second insulating film comprising silicon and nitrogen,

wherein the oxide semiconductor film comprises gallium, zinc and indium.

2. The method according to claim 1 wherein each of the first insulating film and the oxide semiconductor film is formed by sputtering.

3. The method according to claim 1 wherein the third insulating film further comprises oxygen.

4. The method according to claim 1, further comprising the step of heating the oxide semiconductor film at a temperature 250°

C. to 570°

C. in order to crystallize at least a portion of the oxide semiconductor film.

5. The method according to claim 1, further comprising the step of crystallizing at least a portion of the oxide semiconductor film by laser irradiation.

6. The method according to claim 1, further comprising the step of crystallizing at least a portion of the oxide semiconductor film by rapid thermal annealing using light.

7. A method of manufacturing a semiconductor device comprising the steps of:

forming a gate electrode over a substrate;

forming a first insulating film over the gate electrode by using SiH₄ and NH₃ as reaction gases;

forming a second insulating film over the first insulating film by using SiH₄ and N₂O as reaction gases;

forming an oxide semiconductor film over the gate electrode with the first insulating film and the second insulating film interposed therebetween, the oxide semiconductor film including a channel formation region;

forming a source electrode and a drain electrode over the oxide semiconductor film, wherein part of the oxide semiconductor film between the source electrode and the drain electrode is etched, wherein each of the source electrode and the drain electrode comprises a tungsten layer;

forming a protective film over the oxide semiconductor film, the source electrode and the drain electrode; and

forming a third insulating film over the oxide semiconductor film and the protective film, the third insulating film comprising a material selected from the group consisting of silicon nitride, silicon oxide, silicon nitride oxide, and silicon oxynitride,

wherein the oxide semiconductor film comprises gallium, zinc and indium.

8. The method according to claim 7 wherein each of the first insulating film and the oxide semiconductor film is formed by sputtering.

9. The method according to claim 7 wherein the protective film comprises a material selected from the group consisting of silicon oxide, silicon nitride, silicon oxynitride, and silicon nitride oxide.

10. The method according to claim 7, further comprising the step of heating the oxide semiconductor film at a temperature 250°

C. to 570°

C. in order to crystallize at least a portion of the oxide semiconductor film.

11. The method according to claim 7, further comprising the step of crystallizing at least a portion of the oxide semiconductor film by laser irradiation.

12. The method according to claim 7, further comprising the step of crystallizing at least a portion of the oxide semiconductor film by rapid thermal annealing using light.

13. A method of manufacturing a semiconductor device comprising the steps of:

forming a gate electrode over a substrate;

forming a first insulating film over the gate electrode by using SiH₄ and NH₃ as reaction gases;

forming a second insulating film over the first insulating film by using SiH₄ and N₂O as reaction gases;

forming an oxide semiconductor film over the gate electrode with the first insulating film and the second insulating film interposed therebetween, the oxide semiconductor film including a channel formation region;

forming a source electrode and a drain electrode over the oxide semiconductor film, wherein part of the oxide semiconductor film between the source electrode and the drain electrode is etched, wherein each of the source electrode and the drain electrode comprises a tungsten layer; and

forming a third insulating film over the oxide semiconductor film, the source electrode and the drain electrode, the third insulating film comprising silicon oxide and being in contact with at least a portion of the oxide semiconductor film,

wherein the oxide semiconductor film comprises gallium, zinc and indium.

14. The method according to claim 13 wherein each of the first insulating film and the oxide semiconductor film is formed by sputtering.

15. The method according to claim 13, further comprising the step of heating the oxide semiconductor film at a temperature 250°

C. to 570°

C. in order to crystallize at least a portion of the oxide semiconductor film.

16. The method according to claim 13, further comprising the step of crystallizing at least a portion of the oxide semiconductor film by laser irradiation.

17. The method according to claim 13, further comprising the step of crystallizing at least a portion of the oxide semiconductor film by rapid thermal annealing using light.

18. A method of manufacturing a semiconductor device comprising the steps of:

forming a gate electrode over a substrate;

forming a first insulating film over the gate electrode by using SiH₄ and NH₃ as reaction gases;

forming a second insulating film over the first insulating film by using SiH₄ and N₂O as reaction gases;

forming an oxide semiconductor film over the gate electrode with the first insulating film and the second insulating film interposed therebetween, the oxide semiconductor film including a channel formation region;

forming a source electrode and a drain electrode over the oxide semiconductor film, wherein part of the oxide semiconductor film between the source electrode and the drain electrode is etched, wherein each of the source electrode and the drain electrode comprises a tungsten layer; and

forming a third insulating film by sputtering or plasma CVD over the oxide semiconductor film, the source electrode and the drain electrode, the third insulating film comprising a material selected from the group consisting of silicon nitride, silicon oxide, silicon nitride oxide, and silicon oxynitride and being in contact with at least a portion of the oxide semiconductor film,

wherein the oxide semiconductor film comprises gallium, zinc and indium.

19. The method according to claim 18 wherein each of the first insulating film and the oxide semiconductor film is formed by sputtering.

20. The method according to claim 18 wherein the step of etching is performed by dry etching using a gas containing chlorine.

21. The method according to claim 18, further comprising the step of heating the oxide semiconductor film at a temperature 250°

C. to 570°

C. in order to crystallize at least a portion of the oxide semiconductor film.

22. The method according to claim 18, further comprising the step of crystallizing at least a portion of the oxide semiconductor film by laser irradiation.

23. The method according to claim 18, further comprising the step of crystallizing at least a portion of the oxide semiconductor film by rapid thermal annealing using light.

24. A method of manufacturing a semiconductor device comprising the steps of:

forming a gate electrode over a substrate;

forming a first insulating film over the gate electrode by using SiH₄ and NH₃ as reaction gases;

forming a second insulating film over the first insulating film by using SiH₄ and N₂O as reaction gases;

forming an oxide semiconductor film over the gate electrode with the first insulating film and the second insulating film interposed therebetween, the oxide semiconductor film including a channel formation region;

forming a source electrode and a drain electrode over the oxide semiconductor film, wherein part of the oxide semiconductor film between the source electrode and the drain electrode is etched, wherein each of the source electrode and the drain electrode comprises a tungsten layer; and

forming a third insulating film over the oxide semiconductor film, the source electrode and the drain electrode,

wherein the oxide semiconductor film comprises gallium, zinc and indium.

25. The method according to claim 24 wherein each of the first insulating film and the oxide semiconductor film is formed by sputtering.

26. The method according to claim 24 wherein the step of etching is performed by dry etching using a gas containing chlorine.

27. The method according to claim 24 wherein the third insulating film comprises a material selected from the group consisting of silicon nitride, silicon oxide, silicon nitride oxide, and silicon oxynitride.

28. The method according to claim 24 wherein the third insulating film comprises a material selected from the group consisting of aluminum oxynitride and aluminum oxide.

29. The method according to claim 24, further comprising the step of heating the oxide semiconductor film at a temperature 250°

C. to 570°

C. in order to crystallize at least a portion of the oxide semiconductor film.

30. The method according to claim 24, further comprising the step of crystallizing at least a portion of the oxide semiconductor film by laser irradiation.

31. The method according to claim 24, further comprising the step of crystallizing at least a portion of the oxide semiconductor film by rapid thermal annealing using light.

32. A method of manufacturing a semiconductor device comprising the steps of:

forming a gate electrode over a substrate;

forming a first insulating film comprising silicon oxide over the gate electrode by using SiH₄ and NH₃ as reaction gases;

forming a second insulating film over the first insulating film by using SiH₄ and N₂O as reaction gases;

forming an oxide semiconductor film over the gate electrode with the first insulating film and the second insulating film interposed therebetween, the oxide semiconductor film including a channel formation region;

forming a source electrode and a drain electrode over the oxide semiconductor film, wherein part of the oxide semiconductor film between the source electrode and the drain electrode is etched, wherein each of the source electrode and the drain electrode comprises a tungsten layer; and

forming a third insulating film over the oxide semiconductor film, the source electrode and the drain electrode, the third insulating film comprising a first film comprising silicon oxide and a second film on the first film, the second film comprising aluminum oxide or aluminum oxynitride,

wherein the first film is in contact with a surface of the oxide semiconductor film, and

wherein the oxide semiconductor film comprises gallium, zinc and indium.

33. The method according to claim 32 wherein each of the first insulating film and the oxide semiconductor film is formed by sputtering.

34. The method according to claim 32, further comprising the step of heating the oxide semiconductor film at a temperature 250°

C. to 570°

C. in order to crystallize at least a portion of the oxide semiconductor film.

35. The method according to claim 32, further comprising the step of crystallizing at least a portion of the oxide semiconductor film by laser irradiation.

36. The method according to claim 32, further comprising the step of crystallizing at least a portion of the oxide semiconductor film by rapid thermal annealing using light.