Image sensor with a curved surface
First Claim
Patent Images
1. A method for manufacturing an image sensor, comprising the successive steps of:
- defining, in a semiconductor substrate extending on a semiconductor support with an interposed insulating layer, through trenches delimiting columns, each column having a distal end and a proximal end separate from the distal end;
forming one or more pixels in the distal end of each of the columns; and
deforming a structure so that the proximal ends of each of said columns come closer to each other or draw away from each other to form a surface in the shape of a polyhedral cap, wherein the proximal end of each column includes the semiconductor substrate without pixels.
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Abstract
A method for manufacturing an image sensor, including the successive steps of: forming columns of a semiconductor material; forming one or several pixels at a first end of each of the columns; and deforming the structure so that the second ends of each of the columns come closer to each other or draw away from each other to form a surface in the shape of a polyhedral cap.
57 Citations
27 Claims
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1. A method for manufacturing an image sensor, comprising the successive steps of:
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defining, in a semiconductor substrate extending on a semiconductor support with an interposed insulating layer, through trenches delimiting columns, each column having a distal end and a proximal end separate from the distal end; forming one or more pixels in the distal end of each of the columns; and deforming a structure so that the proximal ends of each of said columns come closer to each other or draw away from each other to form a surface in the shape of a polyhedral cap, wherein the proximal end of each column includes the semiconductor substrate without pixels. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method for manufacturing a semiconductor device, the method comprising:
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forming through trenches on a first side of a first semiconductor substrate; forming at least one pixel on a second side of the first semiconductor substrate, wherein the second side is a distal end and opposite to and spaced apart from the first side; placing a semiconductor support on the second side of the first semiconductor substrate with an insulating layer between the first semiconductor substrate and the semiconductor support; positioning the first semiconductor substrate on a surface, wherein the first side of the first semiconductor substrate is the side closest to the surface; and deforming the first semiconductor substrate, wherein the first side of the first semiconductor substrate includes semiconductor material and does not include one or more pixels. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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25. A method comprising:
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forming through trenches in a substrate of semiconductor material, the through trenches delimiting columns having distal first ends and second ends separated from the first ends, the substrate located on an insulating layer over a support, the substrate, the insulating layer, and the support forming a structure; filling the through trenches with an insulating material; forming a single pixel at the first end of each of the columns; removing the insulating material located in the through trenches; and deforming the structure in a manner that draws the second ends of each of the columns closer to each other or draw away from each other to form a surface in the shape of a polyhedral cap, wherein the second ends of the columns include the semiconductor material and do not include pixels. - View Dependent Claims (26, 27)
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Specification