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LEDs with efficient electrode structures

  • US 9,099,613 B2
  • Filed: 08/11/2014
  • Issued: 08/04/2015
  • Est. Priority Date: 05/19/2006
  • Status: Active Grant
First Claim
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1. A Light Emitting Diode (LED) device, comprising:

  • a semiconductor structure comprising an active region, the active region being in electrical contact with a P doped region formed to have a generally planar surface, through which light generated in the active region can be emitted;

    a first bond pad structure comprising a first cutout formed in the semiconductor structure, a first dielectric layer disposed partially within the first cutout and partially over the semiconductor structure, and a first bond pad disposed partially over the first dielectric layer and partially over the first cutout; and

    a second bond pad structure comprising a second cutout formed in the semiconductor structure, a second dielectric layer disposed partially within the second cutout and partially over the semiconductor structure, and a second bond pad disposed partially over the second dielectric layer and partially over the second cutout.

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