LEDs with efficient electrode structures
First Claim
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1. A Light Emitting Diode (LED) device, comprising:
- a semiconductor structure comprising an active region, the active region being in electrical contact with a P doped region formed to have a generally planar surface, through which light generated in the active region can be emitted;
a first bond pad structure comprising a first cutout formed in the semiconductor structure, a first dielectric layer disposed partially within the first cutout and partially over the semiconductor structure, and a first bond pad disposed partially over the first dielectric layer and partially over the first cutout; and
a second bond pad structure comprising a second cutout formed in the semiconductor structure, a second dielectric layer disposed partially within the second cutout and partially over the semiconductor structure, and a second bond pad disposed partially over the second dielectric layer and partially over the second cutout.
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Abstract
Aspects include Light Emitting Diodes that have a GaN-based light emitting region and a metallic electrode. The metallic electrode can be physically separated from the GaN-based light emitted region by a layer of porous dielectric, which provides a reflecting region between at least a portion of the metallic electrode and the GaN-based light emitting region.
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Citations
7 Claims
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1. A Light Emitting Diode (LED) device, comprising:
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a semiconductor structure comprising an active region, the active region being in electrical contact with a P doped region formed to have a generally planar surface, through which light generated in the active region can be emitted; a first bond pad structure comprising a first cutout formed in the semiconductor structure, a first dielectric layer disposed partially within the first cutout and partially over the semiconductor structure, and a first bond pad disposed partially over the first dielectric layer and partially over the first cutout; and a second bond pad structure comprising a second cutout formed in the semiconductor structure, a second dielectric layer disposed partially within the second cutout and partially over the semiconductor structure, and a second bond pad disposed partially over the second dielectric layer and partially over the second cutout. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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Specification