LEDs with efficient electrode structures

• US 9,099,613 B2
• Filed: 08/11/2014
• Issued: 08/04/2015
• Est. Priority Date: 05/19/2006
• Status: Active Grant

• Current Assignee: Bridgelux Incorporated
• Original Assignee: Bridgelux Incorporated
• Inventors: Shum, Frank T., So, William W., Lester, Steven D.
• Primary Examiner(s): Nguyen, Dao H
• Application Number:
  US14/456,935
• Publication Number:
  US 20140346554A1
• Time in Patent Office: 358 Days
• Field of Search: 257/79, 257/80, 257/96, 257/98, 257/E21.002, 257/E33.005, 257/E33.061, 257/E33.067, 257/E33.068, 372/43.01, 372/50.124, 438/29, 438/31, 438/32
• US Class Current: 1/1
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/385 the electrode extending at least partially onto a side surface of the semiconductor body
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

Aspects include Light Emitting Diodes that have a GaN-based light emitting region and a metallic electrode. The metallic electrode can be physically separated from the GaN-based light emitted region by a layer of porous dielectric, which provides a reflecting region between at least a portion of the metallic electrode and the GaN-based light emitting region.

Claims

1. A Light Emitting Diode (LED) device, comprising:

a semiconductor structure comprising an active region, the active region being in electrical contact with a P doped region formed to have a generally planar surface, through which light generated in the active region can be emitted;

a first bond pad structure comprising a first cutout formed in the semiconductor structure, a first dielectric layer disposed partially within the first cutout and partially over the semiconductor structure, and a first bond pad disposed partially over the first dielectric layer and partially over the first cutout; and

a second bond pad structure comprising a second cutout formed in the semiconductor structure, a second dielectric layer disposed partially within the second cutout and partially over the semiconductor structure, and a second bond pad disposed partially over the second dielectric layer and partially over the second cutout.

2. The device of claim 1 further including a doped wiring extension extending from the second bond pad and into the semiconductor structure.

3. The device of claim 2 wherein the first bond pad structure is an n-bond structure.

4. The device of claim 3 wherein the second bond pad structure is a p-bond structure.

5. The device of claim 4 wherein the wiring extension is a p-wiring extension.

6. The device of claim 4 wherein the first dielectric layer extends in the first cutout from an n-layer of the semiconductor structure to a p-layer.

7. The device of claim 4 wherein the second bond pad extends partially onto the semiconductor structure.