Semiconductor light emitting device and light emitting apparatus

• US 9,099,629 B2
• Filed: 06/27/2013
• Issued: 08/04/2015
• Est. Priority Date: 08/14/2012
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Yang, Jong In, Kim, Yong Il, Song, Kwang Min, Lim, Wan Tae, Han, Se Jun, Hong, Hyun Kwon
• Primary Examiner(s): McCall Shepard, Sonya D
• Application Number:
  US13/929,431
• Publication Number:
  US 20140048838A1
• Time in Patent Office: 768 Days
• Field of Search: None
• US Class Current: 1/1
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 27/156 two-dimensional arrays
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 33/0075 comprising nitride compounds
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A semiconductor light emitting device includes a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer, a first internal electrode, a second internal electrode, an insulating part, and first and second pad electrodes. The active layer is disposed on a first portion of the first conductive semiconductor layer, and has the second conductive layer disposed thereon. The first internal electrode is disposed on a second portion of the first conductive semiconductor layer separate from the first portion. The second internal electrode is disposed on the second conductive semiconductor layer. The insulating part is disposed between the first and second internal electrodes, and the first and second pad electrodes are disposed on the insulating part to connect to a respective one of the first and second internal electrodes.

Claims

1. A semiconductor light emitting device, comprising:

a first conductive semiconductor layer having a first portion and a second portion separated from the first portion;

an active layer disposed on the first portion of the first conductive semiconductor layer; and

a second conductive semiconductor layer disposed on the active layer,

wherein the second portion has a plurality of stripe shape regions, each of which includes a plurality of first regions and a plurality of second regions connecting the plurality of first regions, and each of the first regions has a width that is larger than a width of each of the second regions,

wherein the semiconductor light emitting device further comprises;

a first internal electrode including a plurality of contact regions, each disposed on a corresponding first region;

a second internal electrode disposed on substantially an entire surface of the second conductive semiconductor layer to enclose the first and the second regions, and connected to the second conductive semiconductor layer;

an insulating part disposed on one portion of the second portion, the first and second internal electrodes respectively and having an open region to expose the plurality of contact regions of the first internal electrode and at least one portion of the second internal electrode; and

first and second pad electrodes disposed on the insulating part and each connected to a respective one of the first and second internal electrodes exposed through the open region.

2. The semiconductor light emitting device of claim 1, wherein:

the first internal electrode further includes a plurality of electrode parts connecting the plurality of contact regions, each disposed on a corresponding second region, and

the insulating part is formed to cover the plurality of electrode parts.

3. The semiconductor light emitting device of claim 2, wherein the first pad electrode is disposed on the insulating part to interconnect the plurality of contact regions of the first internal electrode.

4. The semiconductor light emitting device of claim 1, wherein the plurality of stripe shape regions are arranged in substantially parallel to each other.

5. The semiconductor light emitting device of claim 4, wherein the plurality of first regions are arranged in a plurality of rows and a plurality of columns, and each of the second regions connects first regions that are arranged in a same row.

6. The semiconductor light emitting device of claim 5, wherein the first internal electrode includes an interconnecting electrode part disposed on a third region connecting first regions in different rows among the plurality of rows.

7. The semiconductor light emitting device of claim 6, wherein the first internal electrode is formed to a same thickness in the first regions and in the second regions thereof.

8. The semiconductor light emitting device of claim 1, wherein the first pad electrode is disposed on one area of the insulating part to cover the plurality of first regions and the plurality of second regions;

and the second pad electrodes are disposed on the other area of the insulating part.

9. The semiconductor light emitting device of claim 1, wherein the first internal electrode and the first pad electrode are formed of the same material.

10. A light emitting apparatus, comprising:

a mounting substrate; and

a semiconductor light emitting device disposed on the mounting substrate and configured to emit light when an electrical signal is applied thereto,

wherein the semiconductor light emitting device includes;

a first conductive semiconductor layer having a first portion and a second portion separated from the first portion;

an active layer disposed on the first portion of the first conductive semiconductor layer; and

a second conductive semiconductor layer disposed on the active layer,

wherein the second portion has a plurality of stripe shape regions, each of which includes a plurality of first regions and a plurality of second regions connecting the plurality of first regions, and each of the first regions has a width that is larger than a width of each of the second regions,

wherein the semiconductor light emitting device further comprises;

a first internal electrode including a plurality of contact regions, each disposed on a corresponding first region;

a second internal electrode disposed on substantially an entire surface of the second conductive semiconductor layer to enclose the first and the second regions and connected to the second conductive semiconductor layer;

an insulating part disposed on one portion of the second portion, the first and second internal electrodes respectively and having an open region to expose the plurality of contact regions of the first internal electrode and at least one portion of the second internal electrode; and

first and second pad electrodes disposed on the insulating part and each connected to a respective one of the first and second internal electrodes exposed through the open region.