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Optical device structure using GaN substrates and growth structures for laser applications

  • US 9,099,844 B2
  • Filed: 01/21/2015
  • Issued: 08/04/2015
  • Est. Priority Date: 04/13/2009
  • Status: Active Grant
First Claim
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1. A device comprising:

  • a gallium and nitrogen containing surface having a {30-31} crystalline orientation, the {30-31} crystalline orientation being selected from either (30-31) or (30-3-1);

    an active region overlying a portion of the gallium and nitrogen containing surface;

    a laser stripe region formed overlying the active region, the laser stripe region being characterized by a cavity orientation parallel to a projection of the c-direction, the laser stripe region having a first end and a second end;

    a first facet provided on the first end of the laser stripe region, the first facet being substantially orthogonal to the laser stripe region; and

    a second facet provided on the second end of the laser stripe region, the second facet being substantially orthogonal to the laser stripe region,wherein the {30-31} crystalline orientation is off-cut less than +/−

    3 degrees toward or away from a c-plane, and the active region is configured to emit light characterized by a wavelength ranging from about 500 nm to about 580 nm, or from about 430 nm to about 480 nm.

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