Optical device structure using GaN substrates and growth structures for laser applications

• US 9,099,844 B2
• Filed: 01/21/2015
• Issued: 08/04/2015
• Est. Priority Date: 04/13/2009
• Status: Active Grant

• Current Assignee: Kyocera SLD Laser Incorporated (Kyocera Corporation)
• Original Assignee: Soraa Laser Diode, Inc. (Kyocera Corporation)
• Inventors: Raring, James W.
• Primary Examiner(s): NGUYEN, TUAN N
• Application Number:
  US14/601,651
• Publication Number:
  US 20150131688A1
• Time in Patent Office: 195 Days
• Field of Search: 257/E21.211, 438/39, 372/45.01
• US Class Current: 1/1
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01S 5/0014 Measuring characteristics or properties thereof measuring techniques per se G01J, G01K, G01N, G01R
• CPC Class Codes: H01S 5/0202 Cleaving
• CPC Class Codes: H01S 5/028 Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
• CPC Class Codes: H01S 5/0287 Facet reflectivity
• CPC Class Codes: H01S 5/1085 Oblique facets
• CPC Class Codes: H01S 5/2009 by using electron barrier layers
• CPC Class Codes: H01S 5/2031 characterized by special waveguide layers, e.g. asymmetric waveguide layers or defined bandgap discontinuities
• CPC Class Codes: H01S 5/2201 in a specific crystallographic orientation
• CPC Class Codes: H01S 5/3202 grown on specifically orientated substrates, or using orientation dependent growth
• CPC Class Codes: H01S 5/32025 non-polar orientation
• CPC Class Codes: H01S 5/320275 semi-polar orientation
• CPC Class Codes: H01S 5/3213 asymmetric clading layers
• CPC Class Codes: H01S 5/34333 with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
• CPC Class Codes: H01S 5/4025 Array arrangements, e.g. constituted by discrete laser diodes or laser bar H01S5/42 takes precedence

Abstract

Optical devices having a structured active region configured for selected wavelengths of light emissions are disclosed.

Claims

1. A device comprising:

a gallium and nitrogen containing surface having a {30-31} crystalline orientation, the {30-31} crystalline orientation being selected from either (30-31) or (30-3-1);

an active region overlying a portion of the gallium and nitrogen containing surface;

a laser stripe region formed overlying the active region, the laser stripe region being characterized by a cavity orientation parallel to a projection of the c-direction, the laser stripe region having a first end and a second end;

a first facet provided on the first end of the laser stripe region, the first facet being substantially orthogonal to the laser stripe region; and

a second facet provided on the second end of the laser stripe region, the second facet being substantially orthogonal to the laser stripe region,

wherein the {30-31} crystalline orientation is off-cut less than +/−

3 degrees toward or away from a c-plane, and the active region is configured to emit light characterized by a wavelength ranging from about 500 nm to about 580 nm, or from about 430 nm to about 480 nm.

2. A device comprising:

a gallium and nitrogen containing surface having a {30-31} crystalline orientation;

an active region formed overlying a portion of the gallium and nitrogen containing surface;

a laser stripe region formed overlying the active region, the laser stripe region being characterized by a cavity orientation parallel to a projection of the c-direction, the laser stripe region having a first end and a second end;

a first semipolar surface facet provided on the first end of the laser stripe region; and

a second semipolar surface facet provided on the second end of the laser stripe region;

wherein the optical device comprises one or more cladding layers that are substantially aluminum-free, and the {30-31} crystalline orientation is off-cut less than +/−

3 degrees toward or away from a c-plane.

3. The device of claim 2 wherein the active region is configured to emit light characterized by a wavelength ranging from about 500 nm to about 580 nm, or from about 430 nm to about 480 nm.

4. The device of claim 3 wherein each of the one or more cladding layers comprises less than about 2% mole fraction of AlN.

5. The device of claim 3 further comprising an n-type metal region overlying a backside of the gallium and nitrogen containing surface and a p-type metal region overlying an upper portion of the laser stripe region.

6. The device of claim 3 wherein the laser stripe region comprises an overlying dielectric layer exposing an upper portion of the laser stripe region.

7. The device of claim 3 wherein each of the first semipolar surface facet and the second semipolar surface facet is provided by a scribing process and a breaking process, and wherein the scribing process is performed with a laser using a top-side skip-scribe process.

8. The device of claim 3 wherein the active region comprises three to seven quantum well regions.