Control of uniformity in a surface wave plasma source

• US 9,101,042 B2
• Filed: 12/19/2012
• Issued: 08/04/2015
• Est. Priority Date: 07/24/2012
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Voronin, Sergey A., Ranjan, Alok
• Primary Examiner(s): Donovan, Lincoln
• Assistant Examiner(s): Cheng, Diana J
• Application Number:
  US13/720,485
• Publication Number:
  US 20140028184A1
• Time in Patent Office: 958 Days
• Field of Search: 315 34- 39, 315/111.21, 315/111.41
• US Class Current: 1/1
• CPC Class Codes: H05H 1/46 using applied electromagnetic fields, e.g. high frequency or microwave energy H05H1/26 takes precedence
• CPC Class Codes: H05H 1/4615 using surface waves
• CPC Class Codes: H05H 1/463 using antennas or applicators

Abstract

A surface wave plasma source (SWPS) is disclosed, having an electromagnetic (EM) wave launcher including a slot antenna configured to couple EM energy in a desired EM wave mode to a plasma by generating a surface wave on a plasma surface of the SWPS adjacent the plasma. The SWPS also includes a dielectric window positioned below the slot antenna, having a lower surface and the plasma surface. The SWPS further includes an attenuation assembly disposed between the slot antenna and the plasma surface. The attenuation assembly includes a first fluid channel substantially aligned with a first arrangement of slots in the slot antenna, and is configured to receive a first flow of a first fluid at a first fluid temperature. The SWPS finally includes a power coupling system coupled to the EM wave launcher and configured to provide EM energy to the EM wave launcher for forming the plasma.

Claims

1. A surface wave plasma source (SWPS), comprising:

an electromagnetic (EM) wave launcher configured to couple EM energy in a desired EM wave mode to a plasma by generating a surface wave on a plasma surface located adjacent said plasma, said EM wave launcher comprising a slot antenna having a plurality of slots formed therethrough configured to couple said EM energy from a first region above said slot antenna to a second region below said slot antenna;

a dielectric window positioned in said second region and having a lower surface of said dielectric window including said plasma surface;

an attenuation assembly disposed between said slot antenna and said plasma surface, wherein said attenuation assembly includes a first fluid channel substantially aligned with a first arrangement of slots in said plurality of slots and configured to receive a first flow of a first fluid at a first fluid temperature;

a fluid supply system coupled to said first fluid channel and configured to supply said first flow of said first fluid through said first fluid channel;

a fluid temperature control system configured to selectably add or remove heat from said first fluid; and

a power coupling system coupled to said EM wave launcher and configured to provide said EM energy to said EM wave launcher for forming said plasma.

2. The surface wave plasma source of claim 1, wherein said attenuation assembly comprises a first portion, a second portion, a sealing channel, and a sealing member;

wherein said first portion and said second portion are joined together and fluidically sealed by the cooperation of said sealing channel and said sealing member.

3. The surface wave plasma source of claim 1 wherein said fluid temperature control system includes an evaporative chiller.

4. The surface wave plasma source of claim 1 wherein said fluid temperature control system includes an air-cooled chiller.

5. The surface wave plasma source of claim 1 wherein said fluid temperature control system includes a resistive heating element.

6. The surface wave plasma source of claim 1 wherein said fluid supply system includes a variable speed pump.

7. The surface wave plasma source of claim 1, further comprising:

a controller electrically coupled to said fluid temperature control system and said fluid supply system, wherein said controller is configured to adjust a magnitude of said first fluid temperature and a speed of said first fluid flow.

8. The surface wave plasma source of claim 7, further including a sensor array configured to detect said magnitude of said first fluid temperature entering or exiting said attenuation assembly, and to detect said speed of said first fluid flow.

9. The surface wave plasma source of claim 8, wherein said controller is electrically coupled to said sensor array and configured to adjust said magnitude of said first fluid temperature and said speed of said first fluid flow, in response to data from said sensor array, to maintain a temperature differential of about 10°

C. to about 85°

C. between said first fluid entering and said first fluid exiting said attenuation assembly.

10. The surface wave plasma source of claim 8, wherein said controller is configured to adjust said magnitude of said first fluid temperature and said speed of said first fluid flow to maintain a selected attenuation level.

11. The surface wave plasma source of claim 1, further comprising:

a second fluid channel formed within said dielectric window, said second fluid channel substantially aligned with a second arrangement of slots in said plurality of slots and configured to receive a second flow of a second fluid at a second fluid temperature.

12. The surface wave plasma source of claim 1, wherein the attenuation assembly is confined within said dielectric window.

13. A surface wave plasma source (SWPS), comprising:

an electromagnetic (EM) wave launcher configured to couple EM energy in a desired EM wave mode to a plasma by generating a surface wave on a plasma surface located adjacent said plasma, said EM wave launcher comprising a slot antenna having a plurality of slots formed therethrough configured to couple said EM energy from a first region above said slot antenna to a second region below said slot antenna;

a dielectric window positioned in said second region and having a lower surface of said dielectric window including said plasma surface;

an attenuation assembly disposed between said slot antenna and said plasma surface, wherein said attenuation assembly includes a first fluid channel substantially aligned with a first arrangement of slots in said plurality of slots and configured to receive a first flow of a first fluid at a first fluid temperature, wherein said first fluid channel includes an EM-transparent duct disposed therein, and configured to form a fluid-tight barrier between said first fluid channel and said first fluid; and

a power coupling system coupled to said EM wave launcher and configured to provide said EM energy to said EM wave launcher for forming said plasma.

14. The surface wave plasma source of claim 13, further comprising:

a fluid supply system coupled to said first fluid channel and configured to supply said first flow of said first fluid through said first fluid channel; and

a fluid temperature control system configured to selectably add or remove heat from said first fluid.

15. The surface wave plasma source of claim 14, further comprising:

a sensor array configured to detect a magnitude of said first fluid temperature entering or exiting said attenuation assembly, and to detect a speed of said first fluid flow; and

a controller electrically coupled to said fluid temperature control system, said fluid supply system, and said sensor array and configured to adjust said magnitude of said first fluid temperature and said speed of said first fluid flow, in response to data from said sensor array, to maintain a temperature differential of about 10°

C. to about 85°

C. between said first fluid entering and said first fluid exiting said attenuation assembly.

16. A method for controlling plasma properties in a surface wave plasma source (SWPS), comprising:

providing an electromagnetic (EM) wave launcher configured to couple EM energy in a desired EM wave mode to a plasma by generating a surface wave on a plasma surface located adjacent said plasma, said EM wave launcher comprising a slot antenna having a plurality of slots formed therethrough configured to couple said EM energy from a first region above said slot antenna to a second region below said slot antenna;

positioning a dielectric window in said second region and having a lower surface of said dielectric window including said plasma surface,

disposing an attenuation assembly between said slot antenna and said plasma surface, wherein said attenuation assembly includes a first fluid channel substantially aligned with a first arrangement of slots in said plurality of slots and configured to receive a first flow of a first fluid at a first fluid temperature;

coupling a power coupling system to said EM wave launcher configured to provide said EM energy to said EM wave launcher for forming said plasma;

controlling a plasma property of said plasma by adjusting a dielectric property of said attenuation assembly, wherein said adjusting is of said first fluid temperature;

providing a fluid supply system coupled to said first fluid channel and configured to supply said first flow of said first fluid through said first fluid channel;

a fluid temperature control system configured to selectably add or remove heat from said first fluid;

a controller electrically coupled to said fluid temperature control system and said fluid supply system and configured to adjust a magnitude of said first fluid temperature and a speed of said first fluid flow; and

a sensor array configured to detect said magnitude of said first fluid temperature entering or exiting said attenuation assembly and to detect said speed of said first fluid flow; and

using said controller, said sensor array, said fluid temperature control system, and said fluid supply system to adjust a magnitude of said first fluid temperature and a speed of said first fluid flow to maintain a fluid metric during semiconductor processing.

17. The method of claim 16 wherein maintaining said fluid metric includes sustaining a selected average first fluid temperature throughout a volume of said first fluid confined within said attenuation assembly.

18. The method of claim 16 wherein maintaining said fluid metric includes sustaining a temperature differential of about 10°

C. to about 85°

C. between said first fluid entering and said first fluid exiting said attenuation assembly.

19. The method of claim 16, wherein maintaining said fluid metric includes maintaining a selected attenuation level.

20. The method of claim 16, further comprising:

controlling a uniformity of said plasma by providing a second fluid channel formed within said attenuation assembly, said second fluid channel being substantially aligned with a second arrangement of slots in said plurality of slots and configured to receive a second flow of a second fluid at a second fluid temperature, and altering said uniformity by adjusting said first fluid temperature, said second fluid temperature, or both.