Method and system for growing a thin film using a gas cluster ion beam

• US 9,103,031 B2
• Filed: 06/24/2008
• Issued: 08/11/2015
• Est. Priority Date: 06/24/2008
• Status: Active Grant

• Current Assignee: TEL Manufacturing and Engineering of America, Inc.
• Original Assignee: TEL Epion Inc. (Tokyo Electron Limited)
• Inventors: Hautala, John J., Graf, Michael, Shao, Yan, Freer, Brian S.
• Primary Examiner(s): Yuan, Dah-Wei D
• Assistant Examiner(s): Hernandez-Diaz, Jose
• Application Number:
  US12/144,968
• Publication Number:
  US 20090317564A1
• Time in Patent Office: 2,604 Days
• Field of Search: 427/472, 427/474, 427/567, 427/568
• US Class Current: 1/1
• CPC Class Codes: C23C 14/10 Glass or silica
• CPC Class Codes: C23C 14/221 Ion beam deposition C23C14/46, C23C14/48 take precedence
• CPC Class Codes: C23C 14/48 Ion implantation
• CPC Class Codes: H01J 2237/0812 Ionized cluster beam [ICB] sources
• CPC Class Codes: H01J 27/026 Cluster ion sources

Abstract

A method of forming a thin film on a substrate is described. The method comprises providing a substrate in a reduced-pressure environment, and generating a gas cluster ion beam (GCIB) in the reduced-pressure environment from a pressurized gas mixture. A beam acceleration potential and a beam dose are set to achieve a thickness of the thin film ranging up to about 300 angstroms and to achieve a surface roughness of an upper surface of the thin film that is less than about 20 angstroms. The GCIB is accelerated according to the beam acceleration potential, and the accelerated GCIB is irradiated onto at least a portion of the substrate according to the beam dose. By doing so, the thin film is grown on the at least a portion of the substrate to achieve the thickness and the surface roughness.

Claims

1. A method of growing a silicon-containing thin film on a substrate, comprising:

providing a substrate in a reduced-pressure environment;

generating a gas cluster ion beam (GCIB) in said reduced-pressure environment from a pressurized gas mixture comprising an oxygen-containing gas, a nitrogen-containing gas, a carbon-containing gas, a hydrogen-containing gas, a silicon-containing gas, or a germanium-containing gas, or a combination of two or more thereof;

establishing a first data set relating a thickness of a grown silicon-containing thin film resulting from a growth process as a function of beam acceleration potential and beam dose, wherein said thickness increases with an increase in said beam acceleration potential and/or said beam dose;

establishing a second data set relating a surface roughness of an upper surface of said grown silicon-containing thin film from said growth process as a function of said beam acceleration potential, wherein said surface roughness decreases with a decrease in said beam acceleration potential, and wherein establishing said first and second data sets includes relating said thickness and surface roughness to a beam energy distribution of said GCIB;

based on said first and second data sets, selecting said beam acceleration potential and said beam dose for said growth process to achieve a target thickness of said grown silicon-containing thin film and to achieve a target surface roughness of said upper surface of said grown silicon-containing thin film;

accelerating said GCIB according to said selected beam acceleration potential;

irradiating said accelerated GCIB onto at least a portion of said substrate according to said selected beam dose;

modifying said beam energy distribution of said accelerated GCIB for said growth process based on said first and second data sets to achieve said target thickness of said grown silicon-containing thin film, or said target surface roughness of said upper surface of said grown silicon-containing thin film, or both, wherein said modifying said beam energy distribution is accompanied by increasing said beam acceleration potential; and

growing said silicon-containing thin film on said at least a portion of said substrate by said growth process to achieve said grown silicon-containing thin film having said target thickness and said target surface roughness.

2. The method of claim 1, wherein said target thickness of said thin film ranges up to 300 angstroms and said target surface roughness is less than 20 angstroms.

3. The method of claim 1, wherein said pressurized gas mixture comprises oxygen and an optional inert gas, and wherein said at least a portion of said substrate comprises silicon, and wherein said grown silicon-containing thin film comprises SiO₂.

4. The method of claim 3, wherein said selected beam acceleration potential ranges up to 100 kV, and wherein said selected beam dose ranges up to 1×

10¹⁶ clusters per cm².

5. The method of claim 3, wherein said selected beam acceleration potential ranges up to 10 kV and wherein said selected beam dose ranges up to 2×

10¹⁴ clusters per cm², and wherein said target thickness ranges up to 140 angstroms and said target surface roughness ranges up to 8 angstroms.

6. The method of claim 3, wherein said selected beam acceleration potential ranges up to 7 kV and wherein said selected beam dose ranges up to 2×

10¹⁴ clusters per cm², and wherein said target thickness ranges up to 115 angstroms and said target surface roughness ranges up to 7 angstroms.

7. The method of claim 3, wherein said selected beam acceleration potential ranges up to 5 kV and wherein said selected beam dose ranges up to 2×

10¹⁴ clusters per cm², and wherein said target thickness ranges up to 80 angstroms and said target surface roughness ranges up to 6 angstroms.

8. The method of claim 3, wherein said selected beam acceleration potential ranges up to 3 kV and wherein said selected beam dose ranges up to 2×

10¹⁴ clusters per cm², and wherein said target thickness ranges up to 55 angstroms and said target surface roughness ranges up to 4 angstroms.

9. The method of claim 3, wherein said selected beam acceleration potential ranges up to 2 kV and wherein said selected beam dose ranges up to 2×

10¹⁴ clusters per cm², and wherein said target thickness ranges up to 25 angstroms and said target surface roughness ranges up to 2 angstroms.

10. The method of claim 1, wherein said modifying said beam energy distribution comprises broadening said beam energy distribution to decrease said surface roughness of said silicon-containing thin film, or narrowing said beam energy distribution to increase said surface roughness of said silicon-containing thin film.

11. The method of claim 1, wherein said modifying said beam energy distribution comprises directing said GCIB along a GCIB path through an increased pressure region such that at least a portion of said GCIB path traverses said increased pressure region.

12. The method of claim 11, wherein a pressure-distance integral along said at least a portion of said GCIB path is equal to or greater than 0.005 torr-cm, said selected beam acceleration potential ranges up to 70 kV, and said selected beam dose ranges up to 2×

10¹⁴ clusters per cm², and wherein said target thickness ranges up to 70 angstroms and said target surface roughness ranges up to 1 angstrom.

13. The method of claim 11, wherein a pressure-distance integral along said at least a portion of said GCIB path is equal to or greater than 0.002 torr-cm, said selected beam acceleration potential ranges up to 70 kV, and said selected beam dose ranges up to 2×

10¹⁴ clusters per cm², and wherein said target thickness ranges up to 70 angstroms and said target surface roughness ranges up to 2 angstroms.

14. The method of claim 1, wherein said pressurized gas mixture comprises O₂, N₂, NO, NO₂, N₂O, CO, or CO₂, or any combination of two or more thereof.

15. The method of claim 11, wherein a pressure-distance integral along said at least a portion of said GCIB path is equal to or greater than 0.0001 torr-cm.

16. The method of claim 1, wherein said modifying said beam energy distribution comprises modifying a charge state of said GCIB.

17. A method of forming growing a silicon-containing thin film on a substrate, comprising:

providing a substrate in a reduced-pressure environment;

generating a gas cluster ion beam (GCIB) in said reduced-pressure environment from a pressurized gas mixture comprising an oxygen-containing gas, a nitrogen-containing gas, a carbon-containing gas, a hydrogen-containing gas, a silicon-containing gas, or a germanium-containing gas, or a combination of two or more thereof;

establishing a first data set relating a thickness of a grown silicon-containing thin film resulting from a growth process as a function of beam acceleration potential, beam dose, and beam energy distribution, wherein said thickness increases with an increase in said beam acceleration potential and/or said beam dose;

establishing a second data set relating a surface roughness of an upper surface of said grown silicon-containing thin film from said growth process as a function of said beam acceleration potential and said beam energy distribution, wherein said surface roughness decreases with a decrease in said beam acceleration potential and a broadening of said beam energy distribution;

based on said first and second data sets, selecting said beam acceleration potential, said beam dose, and said beam energy distribution for said growth process to achieve a target thickness of said grown silicon-containing thin film and identifying a predicted surface roughness of said upper surface of said grown silicon-containing thin film achievable by said selected beam acceleration potential, beam dose, and beam energy distribution;

decreasing said predicted surface roughness to a target surface roughness while substantially achieving said target thickness at said selected beam dose by increasing said selected beam acceleration potential and further adjusting said selected beam energy distribution;

accelerating said GCIB according to said increased beam acceleration potential and said adjusted beam energy distribution;

irradiating said accelerated GCIB onto at least a portion of said substrate according to said selected beam dose; and

growing said silicon-containing thin film on said at least a portion of said substrate by said growth process to achieve said grown silicon-containing thin film having said target thickness and said target surface roughness.

18. The method of claim 17, wherein said adjusted beam energy distribution is achieved by accelerating said GCIB along a GCIB path through an increased pressure region such that at least a portion of said GCIB path traverses said increased pressure region.

19. The method of claim 18, wherein a pressure-distance integral along said at least a portion of said GCIB path is equal to or greater than 0.005 torr-cm, said increased beam acceleration potential ranges up to 70 kV, and said selected beam dose ranges up to 2×

10¹⁴ clusters per cm², and wherein said target thickness ranges up to 70 angstroms and said target surface roughness ranges up to 1 angstrom.

20. The method of claim 18, wherein a pressure-distance integral along said at least a portion of said GCIB path is equal to or greater than 0.002 torr-cm, said increased beam acceleration potential ranges up to 70 kV, and said selected beam dose ranges up to 2×

10¹⁴ clusters per cm², and wherein said target thickness ranges up to 70 angstroms and said target surface roughness ranges up to 2 angstroms.