Field effect transistor, display element, image display device, and system
First Claim
1. A field effect transistor comprising:
- a gate electrode to which a gate voltage is applied;
a source electrode and a drain electrode that acquire a current in response to the gate voltage;
an active layer located adjacent to the source electrode and the drain electrode, the active layer comprising a metal oxide semiconductor of n-type; and
a gate insulator layer located between the gate electrode and the active layer,wherein the metal oxide semiconductor comprises an n-type substitutional doped oxide with a crystal composition, wherein the n-type doped compound comprises at least one dopant wherein all dopant valences are larger than that of a valence of a metal in the metal oxide semiconductor for which the dopant is being substitutionally doped.
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Abstract
A disclosed field effect transistor includes a gate electrode to which a gate voltage is applied, a source electrode and a drain electrode for acquiring a current in response to the gate voltage, an active layer provided adjacent to the source electrode and the drain electrode, the active layer being formed of an n-type oxide semiconductor, and a gate insulator layer provided between the gate electrode and the active layer. In the field effect transistor, the n-type oxide semiconductor is formed of an n-type doped compound having a chemical composition of a crystal phase obtained by introducing at least one of a trivalent cation, a tetravalent cation, a pentavalent cation and a hexavalent cation.
41 Citations
38 Claims
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1. A field effect transistor comprising:
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a gate electrode to which a gate voltage is applied; a source electrode and a drain electrode that acquire a current in response to the gate voltage; an active layer located adjacent to the source electrode and the drain electrode, the active layer comprising a metal oxide semiconductor of n-type; and a gate insulator layer located between the gate electrode and the active layer, wherein the metal oxide semiconductor comprises an n-type substitutional doped oxide with a crystal composition, wherein the n-type doped compound comprises at least one dopant wherein all dopant valences are larger than that of a valence of a metal in the metal oxide semiconductor for which the dopant is being substitutionally doped. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 36)
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35. A field effect transistor, comprising:
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a gate electrode to which a gate voltage is applied; a source electrode and a drain electrode that acquire a current in response to the gate voltage; an active layer located adjacent to the source electrode and the drain electrode, the active layer comprising a metal oxide semiconductor of n-type; and a gate insulator layer located between the gate electrode and the active layer, wherein the metal oxide semiconductor comprises an n-type substitutional doped oxide with a composition of a tetragonal crystal system, wherein the n-type doped compound comprises at least one dopant selected from the group consisting of a trivalent cation, a tetravalent cation, a pentavalent cation and a hexavalent cation, wherein the tetragonal crystal system is a trirutile compound represented by AE2O6 where A is at least one divalent cation selected from the group consisting of Mg2+, Zn2+, and Cd2+, and E is at least one pentavalent cation selected from the group consisting of Sb5+, Nb5+, and Ta5+, and wherein the n-type doped compound comprises at least one cation selected from the group consisting of Al3+, Ga3+, In3+, Y3+, Ge4+, Sn4+, Ti4+, Zr4+, Hf4+, V5+, Nb5+, Ta5+, Sb5+, Mo6+, and W6+, and wherein the valence of the dopant is larger than that of a valence of a metal in the metal oxide semiconductor for which it is being substitutionally doped. - View Dependent Claims (37, 38)
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Specification