Semiconductor device comprising oxide semiconductor
First Claim
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1. A semiconductor device comprising:
- a first wiring, a second wiring, a third wiring, a fourth wiring, a fifth wiring, and a plurality of storage elements connected in parallel between the first wiring and the second wiring,wherein one of the plurality of storage elements includes a first transistor having a first gate electrode, a first source electrode, and a first drain electrode;
a second transistor having a second gate electrode, a second source electrode, and a second drain electrode; and
a capacitor,wherein the first transistor is provided in a substrate including a semiconductor material,wherein the second transistor includes an oxide semiconductor layer,wherein the first gate electrode, one of the second source electrode and the second drain electrode, and one of electrodes of the capacitor are electrically connected to each other,wherein the first wiring and the first source electrode are electrically connected to each other,wherein the second wiring and the first drain electrode are electrically connected to each other,wherein the third wiring and the other of the second source electrode and the second drain electrode are electrically connected to each other,wherein the fourth wiring and the second gate electrode are electrically connected to each other, andwherein the fifth wiring and the other of the electrodes of the capacitor are electrically connected to each other.
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Abstract
An object is to provide a semiconductor device with a novel structure. The semiconductor device includes a first wiring; a second wiring; a third wiring; a fourth wiring; a first transistor having a first gate electrode, a first source electrode, and a first drain electrode; and a second transistor having a second gate electrode, a second source electrode, and a second drain electrode. The first transistor is provided in a substrate including a semiconductor material. The second transistor includes an oxide semiconductor layer.
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Citations
19 Claims
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1. A semiconductor device comprising:
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a first wiring, a second wiring, a third wiring, a fourth wiring, a fifth wiring, and a plurality of storage elements connected in parallel between the first wiring and the second wiring, wherein one of the plurality of storage elements includes a first transistor having a first gate electrode, a first source electrode, and a first drain electrode;
a second transistor having a second gate electrode, a second source electrode, and a second drain electrode; and
a capacitor,wherein the first transistor is provided in a substrate including a semiconductor material, wherein the second transistor includes an oxide semiconductor layer, wherein the first gate electrode, one of the second source electrode and the second drain electrode, and one of electrodes of the capacitor are electrically connected to each other, wherein the first wiring and the first source electrode are electrically connected to each other, wherein the second wiring and the first drain electrode are electrically connected to each other, wherein the third wiring and the other of the second source electrode and the second drain electrode are electrically connected to each other, wherein the fourth wiring and the second gate electrode are electrically connected to each other, and wherein the fifth wiring and the other of the electrodes of the capacitor are electrically connected to each other. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor device comprising:
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a first wiring, a second wiring, a fourth wiring, a fifth wiring, and a plurality of storage elements connected in parallel between the first wiring and the second wiring, wherein one of the plurality of storage elements includes a first transistor having a first gate electrode, a first source electrode, and a first drain electrode;
a second transistor having a second gate electrode, a second source electrode, and a second drain electrode; and
a capacitor,wherein the first transistor is provided in a substrate including a semiconductor material, wherein the second transistor includes an oxide semiconductor layer, wherein the first gate electrode, one of the second source electrode and the second drain electrode, and one of electrodes of the capacitor are electrically connected to each other, wherein the first wiring and the first source electrode are electrically connected to each other, wherein the second wiring and the first drain electrode are electrically connected to each other, wherein the fourth wiring and the second gate electrode are electrically connected to each other, wherein the fifth wiring and the other of the electrodes of the capacitor are electrically connected to each other, wherein the first transistor is a p-channel transistor, and wherein the second transistor is an n-channel transistor. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 19)
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Specification