Semiconductor device having metal gate and manufacturing method thereof
First Claim
1. A method for manufacturing a semiconductor device having metal gate, comprising:
- providing a substrate having at least a first semiconductor device formed thereon, and the first semiconductor device comprising a first gate trench formed therein;
sequentially forming a bottom barrier layer, an etch stop layer, and a p-typed work function metal layer on the substrate;
forming an n-typed work function metal layer in the first gate trench after forming the p-typed work function metal layer;
performing a nitridation process to form a first protecting layer on the n-typed work function metal layer;
performing an oxidation process to the first protecting layer to form a second protecting layer on the n-typed work function metal layer after the nitridation; and
forming a gap-filling metal layer to fill up the first gate trench.
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Abstract
A method for manufacturing a semiconductor device having metal gate includes following steps. A substrate having at least a first semiconductor device formed thereon is provided. The first semiconductor device includes a first gate trench formed therein. Next, an n-typed work function metal layer is formed in the first gate trench. After forming the n-typed work function metal layer, a nitridation process is performed to form a first protecting layer on the n-typed work function metal layer. After forming the first protecting layer, an oxidation process is performed to the first protecting layer to form a second protecting layer on the n-typed work function metal layer. Then, a gap filling metal layer is formed to fill up the first gate trench.
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Citations
13 Claims
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1. A method for manufacturing a semiconductor device having metal gate, comprising:
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providing a substrate having at least a first semiconductor device formed thereon, and the first semiconductor device comprising a first gate trench formed therein; sequentially forming a bottom barrier layer, an etch stop layer, and a p-typed work function metal layer on the substrate; forming an n-typed work function metal layer in the first gate trench after forming the p-typed work function metal layer; performing a nitridation process to form a first protecting layer on the n-typed work function metal layer; performing an oxidation process to the first protecting layer to form a second protecting layer on the n-typed work function metal layer after the nitridation; and forming a gap-filling metal layer to fill up the first gate trench. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor device having metal gate comprising:
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a substrate; a high-k gate dielectric layer formed on the substrate; an n-typed work function metal layer formed on the high-k gate dielectric layer; a first protecting layer formed on the n-typed work function metal layer, the first protecting layer comprising a nitrified material of the n-typed work function metal layer; a second protecting layer formed on the first protecting layer, the second protecting layer comprising an oxidized material of the first protecting layer, wherein the second protecting layer is a TiAlNO layer; and a gap-filling metal layer directly formed on the second protecting layer. - View Dependent Claims (9, 10, 11, 12, 13)
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Specification