×

Semiconductor device having metal gate and manufacturing method thereof

  • US 9,105,720 B2
  • Filed: 09/11/2013
  • Issued: 08/11/2015
  • Est. Priority Date: 09/11/2013
  • Status: Active Grant
First Claim
Patent Images

1. A method for manufacturing a semiconductor device having metal gate, comprising:

  • providing a substrate having at least a first semiconductor device formed thereon, and the first semiconductor device comprising a first gate trench formed therein;

    sequentially forming a bottom barrier layer, an etch stop layer, and a p-typed work function metal layer on the substrate;

    forming an n-typed work function metal layer in the first gate trench after forming the p-typed work function metal layer;

    performing a nitridation process to form a first protecting layer on the n-typed work function metal layer;

    performing an oxidation process to the first protecting layer to form a second protecting layer on the n-typed work function metal layer after the nitridation; and

    forming a gap-filling metal layer to fill up the first gate trench.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×