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Transistor and display device

  • US 9,105,735 B2
  • Filed: 03/18/2014
  • Issued: 08/11/2015
  • Est. Priority Date: 09/04/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a gate electrode;

    a gate insulating layer over the gate electrode;

    an oxide semiconductor layer over the gate insulating layer;

    an oxide insulating layer over the oxide semiconductor layer;

    a source electrode layer over the oxide semiconductor layer and the oxide insulating layer;

    a drain electrode layer over the oxide semiconductor layer and the oxide insulating layer; and

    an insulating layer over the oxide insulating layer and the oxide semiconductor layer,wherein the oxide insulating layer is in contact with an edge portion of the oxide semiconductor layer, andwherein the edge portion is in an oxygen-excess state.

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