Transistor and display device
First Claim
1. A semiconductor device comprising:
- a gate electrode;
a gate insulating layer over the gate electrode;
an oxide semiconductor layer over the gate insulating layer;
an oxide insulating layer over the oxide semiconductor layer;
a source electrode layer over the oxide semiconductor layer and the oxide insulating layer;
a drain electrode layer over the oxide semiconductor layer and the oxide insulating layer; and
an insulating layer over the oxide insulating layer and the oxide semiconductor layer,wherein the oxide insulating layer is in contact with an edge portion of the oxide semiconductor layer, andwherein the edge portion is in an oxygen-excess state.
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Accused Products
Abstract
It is an object to manufacture a highly reliable display device using a thin film transistor having favorable electric characteristics and high reliability as a switching element. In a bottom gate thin film transistor including an amorphous oxide semiconductor, an oxide conductive layer having a crystal region is formed between an oxide semiconductor layer which has been dehydrated or dehydrogenated by heat treatment and each of a source electrode layer and a drain electrode layer which are formed using a metal material. Accordingly, contact resistance between the oxide semiconductor layer and each of the source electrode layer and the drain electrode layer can be reduced; thus, a thin film transistor having favorable electric characteristics and a highly reliable display device using the thin film transistor can be provided.
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Citations
12 Claims
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1. A semiconductor device comprising:
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a gate electrode; a gate insulating layer over the gate electrode; an oxide semiconductor layer over the gate insulating layer; an oxide insulating layer over the oxide semiconductor layer; a source electrode layer over the oxide semiconductor layer and the oxide insulating layer; a drain electrode layer over the oxide semiconductor layer and the oxide insulating layer; and an insulating layer over the oxide insulating layer and the oxide semiconductor layer, wherein the oxide insulating layer is in contact with an edge portion of the oxide semiconductor layer, and wherein the edge portion is in an oxygen-excess state. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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Specification