Method and structure for thin film photovoltaic materials using semiconductor materials

• US 9,105,776 B2
• Filed: 05/14/2007
• Issued: 08/11/2015
• Est. Priority Date: 05/15/2006
• Status: Active Grant

• Current Assignee: Stion Corporation
• Original Assignee: Stion Corporation
• Inventors: Lee, Howard W. H.
• Primary Examiner(s): MARTIN, MATTHEW T
• Application Number:
  US11/748,444
• Publication Number:
  US 20070264488A1
• Time in Patent Office: 3,011 Days
• Field of Search: 136/252, 136/255, 136/258, 136/261, 428/403, 428/333, 252/500
• US Class Current: 1/1
• CPC Class Codes: H01L 31/032 including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
• CPC Class Codes: H01L 31/0352 characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
• CPC Class Codes: H01L 31/06 characterised by potential barriers
• CPC Class Codes: H01L 31/074 comprising a heterojunction with an element of Group IV of the Periodic Table, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy
• CPC Class Codes: Y10T 428/25 Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles

Abstract

A photovoltaic device and related methods. The device has a nanostructured material positioned between an electron collecting electrode and a hole collecting electrode. An electron transporting/hole blocking material is positioned between the electron collecting electrode and the nanostructured material. In a specific embodiment, negatively charged carriers generated by optical absorption by the nanostructured material are preferentially separated into the electron transporting/hole blocking material. In a specific embodiment, the nanostructured material has an optical absorption coefficient of at least 10³ cm⁻¹ for light comprised of wavelengths within the range of about 400 nm to about 700 nm.

Claims

1. A photovoltaic nanocomposite nanostructured material, comprising:

a first nanostructured material and a second nanostructured material;

an intermixed region provided between the first nanostructured material and the second nanostructured material comprising the first nanostructured material and the second nanostructured material, wherein the intermixed region comprises extensions of the first nanostructured material alternating laterally across the nanocomposite nanostructured material with extensions of the second nanostructure material;

a third nanostructured material comprising silicon, wherein the third nanostructured material is positioned in between each extension of the first nanostructured material and the second nanostructured material;

a first electron affinity and a first ionization potential characterizing the first nanostructured material;

a second electron affinity and a second ionization potential characterizing the second nanostructured material, whereupon the first electron affinity being less than the second electron affinity and the first ionization potential being less than the second ionization potential, and the second electron affinity being less than that the first ionization potential; and

an optical absorption coefficient of at least 103 cm-1 for light comprised of wavelengths within the range of about 400 nm to about 700 nm characterizing at least one or both of the first nanostructured material and the second nanostructured material.

2. The nanostructured material of claim 1 wherein the first nanostructured material and the second nanostructured material are comprised of a plurality of nanostructures selected from nanoparticles, quantum dots, quantum wires, nano-columns, nanorods, nanotubes, quantum wells, nanoshells, nanobelts, nanoporous materials.

3. The nanostructured material of claim 1 wherein the thickness of the intermixed region ranges from about 1 nm to about 5000 nm;

wherein the spatial distance characterizing the intermixing ranges from about 1 nm to about 5000 nm.

4. The nanostructured material of claim 3 wherein the thickness of the intermixed region ranges from about 1 nm to about 1000 nm;

wherein the spatial distance characterizing the intermixing ranges from about 1 nm to about 1000 nm.

5. The nanostructured material of claim 4 wherein the thickness of the intermixed region ranges from about 1 nm to about 500 nm;

wherein the spatial distance characterizing the intermixing ranges from about 1 nm to about 500 nm.

6. The nanostructured material of claim 5 wherein the thickness of the intermixed region ranges from about 1 nm to about 100 nm;

wherein the spatial distance characterizing the intermixing ranges from about 1 nm to about 100 nm.

7. The nanostructured material of claim 6 wherein the thickness of the intermixed region ranges from about 1 nm to about 50 nm;

wherein the spatial distance characterizing the intermixing ranges from about 1 nm to about 50 nm.

8. The nanostructured material of claim 7 wherein the thickness of the intermixed region ranges from about 1 nm to about 50 nm;

wherein the spatial distance characterizing the intermixing ranges from about 1 nm to about 10 nm.

9. The nanostructured material of claim 8 wherein the thickness of the intermixed region ranges from about 1 nm to about 50 nm;

wherein the spatial distance characterizing the intermixing ranges from about 1 nm to about 5 nm.

10. The nanostructured material of claim 1 wherein the first nanostructured material and the second nanostructured material are comprised of semiconductor materials.

11. The nanostructured material of claim 10 wherein the first nanostructured material and the second nanostructured material are comprised of inorganic semiconductor materials.

12. The nanostructured material of claim 11 wherein the first nanostructured material and the second nanostructured materials are selected from Group IV semiconductor materials and Group IV-IV semiconductor materials.

13. The nanostructured material of claim 12 wherein the first nanostructured material is comprised of Si nanostructures, and the second nanostructured material is comprised of Ge nanostructures.

14. The nanostructured material of claim 12 wherein the first nanostructured material is comprised of SiGe alloys nanostructures.

15. The nanostructured materials of claim 11 wherein the first nanostructured material and the second nanostructured material are selected from metal oxides.

16. The nanostructured material of claim 15 wherein the first nanostructured material is selected from CuO, Cu2O, FeO, Fe2O3, and the second nanostructured material is comprised of metal oxides.

17. The nanostructured material of claim 15 wherein the first nanostructured material is selected from CuO, Cu2O, FeO, Fe2O3, and the second nanostructured material is selected from ZnO, TiO2, SnO2, WO3, Fe2O3.

18. The nanostructured material of claim 1 wherein the first nanostructured material is selected from Group IV semiconductor materials and Group IV-IV semiconductor materials.

19. The nanostructured material of claim 18 wherein the first nanostructured material is selected from Si, Ge, SiGe alloys.

20. The nanostructured material of claim 1 wherein the first nanostructured material is selected from metal oxides.

21. The nanostructured material of claim 20 wherein the first nanostructured material is selected from ZnO, TiO2, SnO2, WO3.

22. The nanostructured material of claim 1 wherein the first nanostructured material is selected from Group IV semiconductor materials and Group IV-IV semiconductor materials;

wherein the second nanostructured material is selected from metal oxides.

23. The nanostructured material of claim 22 wherein the first nanostructured material is selected from Si nanostructures and the second nanostructured material is selected from metal oxides.

24. The nanostructured material of claim 22 wherein the first nanostructured material is selected from Ge nanostructures and the second nanostructured material is selected from metal oxides.

25. The nanostructured material of claim 22 wherein the first nanostructured material is selected from SiGe alloys nanostructures and the second nanostructured material is selected from metal oxides.

26. The nanostructured material of claim 22 wherein the first nanostructured material is selected from Si, Ge, SiGe alloys, and wherein the second nanostructured material is selected from ZnO, TiO2, SnO2, WO3, Fe2O3.

27. The nanostructured material of claim 1 wherein the first nanostructured material is selected from Si, Ge, SiGe alloys, ZnO, TiO2, SnO2, WO3, CuO, Cu2O, FeO, Fe2O3, Fe3O4, Cu2S, FeS, FeS2, SnS, FeSi2.

28. The nanostructured material of claim 1 wherein the first nanostructured material is selected from Si, Ge, SiGe alloys, CuO, Cu2O, FeO, Fe2O3, Cu2S.

29. The nanostructured material of claim 1 wherein the first nanostructured material is selected from Si, Ge, SiGe alloys, CuO, FeO, and the second nanostructured material is selected from ZnO, TiO2, SnO2, WO3.

30. The nanostructured material of claim 1 wherein the first nanostructured material is selected from Cu2O, Fe2O3, Cu2S, FeS, and wherein the second nanostructured material is selected from ZnO, TiO2, SnO2, WO3, Fe2O3.

31. The nanostructured material of claim 1 wherein the first nanostructured material is selected from metal sulfides.

32. The nanostructured material of claim 31 wherein the first nanostructured material is selected from Cu2S, FeS, FeS, SnS.

33. The nanostructured material of claim 1 wherein the first nanostructured material is comprised of nano-columns selected from Group IV semiconductor materials, Group IV-IV semiconductor materials, and metal oxides.

34. The nanostructured materials of claim 33 where the first nanostructured material is comprised of nano-columns selected from Si, Ge, SiGe alloys.

35. The nanostructured materials of claim 33 where the first nanostructured material is comprised of nano-columns selected from ZnO, FeO, Fe2O3, CuO, Cu2O.

36. The nanostructured material of claim 1 wherein the first nanostructured material is comprised of nano-tubes selected from Group IV semiconductor materials, Group IV-IV semiconductor materials, and metal oxides.

37. The nanostructured material of claim 36 where the first nanostructured material is comprised of nano-tubes comprised of TiO2.

38. The nanostructured material of claim 1 wherein the first nanostructured material is selected from Group IV semiconductor materials, Group IV-IV semiconductor materials, and wherein the second the nanostructured material is comprised of nano-columns comprised of metal oxides.

39. The nanostructured material of claim 38 wherein the first nanostructured material is selected from Si, Ge, SiGe alloys, and wherein the second the nanostructured material is comprised of nano-columns comprised of ZnO.

40. The nanostructured material of claim 1 wherein the first nanostructured material is selected from Group IV semiconductor materials, Group IV-IV semiconductor materials, and wherein the second the nanostructured material is comprised of nano-tubes comprised of metal oxides.

41. The nanostructured material of claim 40 wherein the first nanostructured material is selected from Si, Ge, SiGe alloys, and wherein the second the nanostructured material is comprised of nano-tubes comprised of TiO2.

42. The nanostructured material of claim 1 wherein the first nanostructured material is comprised of inorganic semiconductor, and wherein the second nanostructured material is comprised of organic semiconductor.

43. The nanostructured material of claim 1 wherein the first nanostructured material and the second nanostructured material are comprised of organic semiconductor materials.

44. The nanostructured material of claim 1 wherein the optical absorption coefficient is at least 104 cm-1 within the wavelength range of about 400 nm to about 700 nm.

45. The nanostructured material of claim 1 wherein the optical absorption coefficient is at least 105 cm-1 within the wavelength range of about 400 nm to about 700 nm.

46. The nanostructured material of claim 1 wherein positive charge carriers and negative charge carriers generated by optical absorption by the nanostructured material separate at the interface between the first nanostructured material and the second nanostructured material;

wherein negative charge carriers transport in one the nanostructured material with the larger electron affinity and positive charge carriers transport in the other the nanostructured material with the smaller ionization potential.

47. The nanostructured material of claim 46 wherein charge carriers undergo majority carrier transport within the first nanostructured material and the second nanostructured material.

48. The nanostructured material of claim 1 wherein the electron affinity and the ionization potential of the first nanostructured material are less than the electron affinity and the ionization potential of the second nanostructured material, respectively, by at least 100 meV.

49. The nanostructured material of claim 48 wherein the electron affinity and the ionization potential of the first nanostructured material are less than the electron affinity and the ionization potential of the second nanostructured material, respectively, by at least 300 meV.

50. The nanostructured material of claim 49 wherein the electron affinity and the ionization potential of the first nanostructured material are less than the electron affinity and the ionization potential of the second nanostructured material, respectively, by at least 500 meV.

51. The nanostructured material of claim 1 wherein the bandgap of one the nanostructured material is within the range of about 1.0 eV to about 2.0 eV.

52. The nanostructured material of claim 51 wherein the bandgap of one the nanostructured material is within the range of about 1.2 eV to about 1.8 eV.

53. The nanostructured material of claim 52 wherein the bandgap of one the nanostructured material is within the range of about 1.3 eV to about 1.6 eV.

54. The nanostructured material of claim 1 wherein the carrier mobility of at least one the nanostructured material is within the range of about 10-6 cm2/V-s to about 5000 cm2/V-s.

55. The nanostructured material of claim 54 wherein the carrier mobility of at least one the nanostructured material is within the range of about 10-3 cm2/V-s to about 1000 cm2/V-s.

56. The nanostructured material of claim 55 wherein the carrier mobility of at least one the nanostructured material is within the range of about 1 cm2/V-s to about 100 cm2/V-s.

57. A photovoltaic composite material, comprising:

a first nanostructured material, a second nanostructured material, and a third nanostructured material;

an intermixed region provided between the first nanostructured material, the second nanostructured material and the third nanostructured material, wherein the third nanostructured material is positioned between the first nanostructured material and the second nanostructured material, and wherein the third nanostructured material comprises silicon;

a first electron affinity and a first ionization potential characterizing the first nanostructured material;

a second electron affinity and a second ionization potential characterizing the second nanostructured material;

a third electron affinity and a third ionization potential characterizing the third nanostructured material, whereupon the first electron affinity being less than the second electron affinity being less than the third electron affinity, and the first ionization potential being less than the second ionization potential being less than the third ionization potential, and the third electron affinity being less than the first ionization potential; and

an optical absorption coefficient of at least 103 cm-1 for light comprised of wavelengths within the range of about 400 nm to about 700 nm characterizing at least one, two or all three of the first nanostructured material, the second nanostructured material, and the third nanostructured material.