×

LEDs with efficient electrode structures

  • US 9,105,815 B2
  • Filed: 11/11/2012
  • Issued: 08/11/2015
  • Est. Priority Date: 05/19/2006
  • Status: Active Grant
First Claim
Patent Images

1. A Light Emitting Diode (LED) device, comprising:

  • a Gallium-Nitride (GaN) based semiconductor structure comprising an active region, the active region being in electrical contact with a P doped region formed to have a generally planar surface, through which light generated in the active region can be emitted; and

    a metallic electrode structure, comprising a bonding pad area, the metallic electrode structure formed in electrical contact with the planar surface of the P-doped region, wherein a physical interface between the bonding pad area and the planar surface comprises a single layer of dielectric material interposed between the planar surface and the bonding pad area, the single layer of dielectric material being non-perforated and porous, and defining a region of total internal reflection between the metallic electrode structure and the GaN based semiconductor structure.

View all claims
  • 2 Assignments
Timeline View
Assignment View
    ×
    ×