Customized manufacturing method for an optoelectrical device

• US 9,110,463 B2
• Filed: 04/23/2012
• Issued: 08/18/2015
• Est. Priority Date: 02/26/2008
• Status: Active Grant

• Current Assignee: Epistar Corporation
• Original Assignee: Epistar Corporation
• Inventors: Hsieh, Min-Hsun
• Primary Examiner(s): Masinick, Michael D
• Assistant Examiner(s): WHITTINGTON, ANTHONY T
• Application Number:
  US13/453,544
• Publication Number:
  US 20120202303A1
• Time in Patent Office: 1,212 Days
• Field of Search: 700/102, 257/48, 257/101, 385/14
• US Class Current: 1/1
• CPC Class Codes: G05B 19/41865 characterised by job scheduling, process planning, material flow
• CPC Class Codes: G05B 2219/32036 Enter data, values for custom made articles
• CPC Class Codes: G06Q 10/06 Resources, workflows, human or project management; Enterprise or organisation planning; Enterprise or organisation modelling
• CPC Class Codes: G06Q 50/04 Manufacturing
• CPC Class Codes: Y02P 90/02 Total factory control, e.g. smart factories, flexible manufacturing systems [FMS] or integrated manufacturing systems [IMS]
• CPC Class Codes: Y02P 90/30 Computing systems specially adapted for manufacturing

Abstract

The disclosure provides a customized manufacturing method for an optoelectrical device. The customized manufacturing method comprises the steps of providing a manufacturing flow including a front-end flow, a customized module subsequent to the front-end flow, and a pause step between the front-end flow and the customized module, processing a predetermined amount of semi-manufactured products queued at the pause step, tuning the customized module in accordance with a customer'"'"'s request, and processing the semi-manufactured products by the tuned customized module to fulfill the customer'"'"'s request.

Claims

1. A method for manufacturing an optoelectronic device comprising the steps of:

providing a growth wafer;

growing an epitaxial stack having optoelectrical properties on the growth wafer to form a semi-manufactured product;

detecting the optoelectrical criteria of the semi-manufactured product;

providing a pause step after the detecting step, wherein the semi-manufactured product is queued at the pause step for a predetermined time period;

providing a predetermined request with respect to a customized module; and

processing the semi-manufactured product by the customized module in response to the predetermined request, wherein the processing step is after the detecting step,

wherein the predetermined request comprises brightness, light-field or luminous wavelength.

2. The method for manufacturing the optoelectronic device according to claim 1, further comprising a step of forming a plurality of chip regions on the growth wafer.

3. The method for manufacturing the optoelectronic device according to claim 2, further comprising a step of forming a p-side electrode and an n-side electrode on each of the chip regions.

4. The method for manufacturing the optoelectronic device according to claim 1, further comprising a step of comparing the optoelectrical criteria with the predetermined request.

5. The method for manufacturing the optoelectronic device according to claim 1, further comprising a step of dicing the growth wafer to form a plurality of chips.

6. The method for manufacturing the optoelectronic device according to claim 1, wherein the step of processing the semi-manufactured product by a corresponding customized module is tuning a parameter according to a pre-formed lookup table or a relation curve of the customized module.

8. The method for manufacturing an optoelectronic device according to claim 1, further comprising the step of dicing the growth wafer to form a plurality of chips after detecting the optoelectrical criteria of the semi-manufactured product.

7. A method for manufacturing an optoelectronic device, comprising the steps of:

providing a growth wafer;

growing an epitaxial stack having optoelectrical properties on the growth wafer to form a semi-manufactured product;

detecting the optoelectrical criteria of the semi-manufactured product;

providing a pause step after the detecting step, wherein the semi-manufactured product is queued at the pause step for a predetermined time period;

providing a predetermined request with respect to a customized module; and

processing the semi-manufactured product by the customized module in response to the predetermined request, wherein the processing step is after the detecting step,

wherein the optoelectrical criteria comprises peak wavelength or half-peak width.