Plasma processing apparatus

• US 9,111,726 B2
• Filed: 04/24/2012
• Issued: 08/18/2015
• Est. Priority Date: 04/25/2011
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Moyama, Kazuki, Ishibashi, Kiyotaka, Morita, Osamu, Tanikawa, Takehiro, Matsumoto, Naoki, Mihara, Naoki, Yoshikawa, Wataru
• Primary Examiner(s): DHINGRA, RAKESH KUMAR
• Application Number:
  US13/454,513
• Publication Number:
  US 20120267048A1
• Time in Patent Office: 1,211 Days
• Field of Search: 156/345.33, 156/345.34, 156/345.35, 156/345.36, 156/345.41, 118/723.MW, 118/723.ME, 118/723.MR, 118/715
• US Class Current: 1/1
• CPC Class Codes: H01J 37/32192 Microwave generated discharge H01J37/32357, H01J37/32366, H01J37/32394, H01J37/32403 take precedence
• CPC Class Codes: H01J 37/32229 Waveguides
• CPC Class Codes: H01J 37/3244 Gas supply means

Abstract

A plasma processing apparatus includes a processing chamber, a stage, a dielectric member, a microwave introduction device, an injector, and an electric field shield. The processing chamber has a processing space therein. The stage is provided within the processing chamber. The dielectric member has a through hole and is provided to face the stage. The microwave introduction device is configured to introduce microwave into the processing space via the dielectric member. The injector has at least one through hole and is made of a dielectric material, e.g., a bulk dielectric material. The injector is provided within the dielectric member. The injector and the through hole of the dielectric member form a path for supplying a processing gas into the processing space. The electric field shield encloses the injector.

Claims

1. A plasma processing apparatus comprising:

a processing chamber having a processing space therein;

a stage provided within the processing chamber;

a dielectric member, having a through hole, provided to face the stage;

a microwave introduction device comprising a coaxial waveguide and configured to introduce microwave into the processing space via the dielectric member;

an injector, having at least one through hole, made of a dielectric material and provided within the dielectric member; and

an electric field shield within the dielectric member and enclosing the injector,

wherein the coaxial waveguide, the injector and the through hole of the dielectric member form a path for supplying a processing gas into the processing space, and

the electric field shield is extended downwardly from an upper surface of the injector to a position that is within the dielectric member and closer to the processing space than a bottom surface of the injector.

2. The plasma processing apparatus of claim 1,

wherein the injector is made of a bulk dielectric material.

3. The plasma processing apparatus of claim 1,

wherein the injector is in contact with the dielectric member.

4. The plasma processing apparatus of claim 1,

wherein the injector is formed as one single body with the dielectric member.

5. The plasma processing apparatus of claim 1,

wherein the injector has a first surface and a second surface opposite to the first surface, the second surface facing the processing space,

the at least one through hole of the injector is extended between the first surface and the second surface, and

the electric field shield is extended to a position closer to the processing space than the second surface in a direction from the first surface toward the second surface.

6. The plasma processing apparatus of claim 1,

wherein the microwave introduction device comprises:

a coaxial waveguide; and

a slot plate, made of a metal, serving as an antenna coupled to the coaxial waveguide and having a multiple number of slots in a radial direction and in a circumferential direction thereof, and

the processing gas is supplied into the injector from a pipe disposed in a hole inside an inner conductor of the coaxial waveguide.

7. The plasma processing apparatus of claim 6,

wherein the electric field shield is integrated as one single body with the pipe.

8. The plasma processing apparatus of claim 1,

wherein the injector is made of quartz.

9. The plasma processing apparatus of claim 1,

wherein each of the at least one through hole of the injector has a slit shape.

10. The plasma processing apparatus of claim 9,

wherein each of the at least one through hole of the injector is formed such that a width thereof is decreased toward the processing space.

11. The plasma processing apparatus of claim 10,

wherein the at least one through hole of the injector is formed by laser machining.

12. The plasma processing apparatus of claim 10,

wherein a narrowest portion of the at least one through hole of the injector has a width equal to or smaller than about 0.2 mm.