Semiconductor component and method of manufacture
First Claim
1. A method for manufacturing a semiconductor component having a common mode filter monolithically integrated with a protection device, comprising:
- providing a semiconductor material having a major surface and a resistivity of at least 10 ohm-centimeters;
forming a plurality of trenches in the semiconductor material;
forming the protection device from the semiconductor material between first and second trenches of the plurality of trenches;
monolithically integrating a common mode filter with the protection device; and
monolithically integrating a metal-insulator-metal capacitor with the common mode filter.
4 Assignments
0 Petitions
Accused Products
Abstract
In accordance with an embodiment, a semiconductor component includes a common mode filter monolithically integrated with a protection device. The common mode filter may be composed of first, second, third, and fourth coils, wherein each coil has first and second terminals and the first coil is magnetically coupled to the second coil and the third coil is magnetically coupled to the fourth coil. The protection device has a first terminal coupled to the first terminal of the first coil and a second terminal coupled to the first terminal of the third coil. An energy storage element has a terminal coupled to the second and first terminals of the first and second coils, respectively. Another embodiment includes monolithically integrating a common mode filter with a protection device and monolithically integrating a metal-insulator-metal capacitor with the common mode filter.
-
Citations
20 Claims
-
1. A method for manufacturing a semiconductor component having a common mode filter monolithically integrated with a protection device, comprising:
-
providing a semiconductor material having a major surface and a resistivity of at least 10 ohm-centimeters; forming a plurality of trenches in the semiconductor material; forming the protection device from the semiconductor material between first and second trenches of the plurality of trenches; monolithically integrating a common mode filter with the protection device; and monolithically integrating a metal-insulator-metal capacitor with the common mode filter. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
-
-
11. A method for manufacturing a semiconductor component having a common mode filter monolithically integrated with a protection device, comprising:
-
providing a semiconductor material having a major surface and a resistivity of at least 10 ohm-centimeters; forming a plurality of trenches in the semiconductor material; forming the protection device from the semiconductor material between first and second trenches of the plurality of trenches; monolithically integrating a common mode filter with the protection device, the common mode filter comprising; a first coil having first and second terminals; a second coil having first and second terminals, the first terminal of the second coil coupled to the second terminal of the first coil, the first coil magnetically coupled to the second coil; a third coil having first and second terminals; a fourth coil having first and second terminals, the first terminal of the fourth coil coupled to the second terminal of the third coil, the third coil magnetically coupled to the fourth coil; and monolithically integrating a metal-insulator-metal capacitor with the common mode filter. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
-
Specification