Thin film transistor panel having an etch stopper on semiconductor
First Claim
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1. A panel comprising a thin film transistor, the panel comprising:
- a substrate;
a first electrode on the substrate;
a first insulating layer on the first electrode;
an oxide semiconductor pattern on the first insulating layer;
an etch stopper on the oxide semiconductor pattern;
a second electrode and a third electrode on the etch stopper and the oxide semiconductor pattern,wherein the first insulating layer comprises a first region disposed under the etch stopper and a second region disposed outside the first region, andwherein a thickness of the first region exceeds a thickness of the second region.
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Abstract
A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.
12 Citations
11 Claims
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1. A panel comprising a thin film transistor, the panel comprising:
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a substrate; a first electrode on the substrate; a first insulating layer on the first electrode; an oxide semiconductor pattern on the first insulating layer; an etch stopper on the oxide semiconductor pattern; a second electrode and a third electrode on the etch stopper and the oxide semiconductor pattern, wherein the first insulating layer comprises a first region disposed under the etch stopper and a second region disposed outside the first region, and wherein a thickness of the first region exceeds a thickness of the second region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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Specification