Circuit board and display device including first and second channel layers made of different semiconductor materials

• US 9,111,810 B2
• Filed: 03/02/2011
• Issued: 08/18/2015
• Est. Priority Date: 04/30/2010
• Status: Expired due to Fees

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Kitagawa, Hideki, Tanaka, Shinya, Imai, Hajime, Murai, Atsuhito, Imade, Mitsunori, Kikuchi, Tetsuo, Morimoto, Kazunori, Shimada, Junya, Nishimura, Jun
• Primary Examiner(s): Diallo, Mamadou
• Assistant Examiner(s): Chang, Jay C
• Application Number:
  US13/643,652
• Publication Number:
  US 20130146866A1
• Time in Patent Office: 1,630 Days
• Field of Search: None
• US Class Current: 1/1
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1251 comprising TFTs having a different architecture, e.g. top- and bottom gate TFTs
• CPC Class Codes: H01L 27/1259 Multistep manufacturing methods
• CPC Class Codes: H01L 27/1446 in a repetitive configuration
• CPC Class Codes: H01L 27/14632 Wafer-level processed structures
• CPC Class Codes: H01L 27/14678 Contact-type imagers

Abstract

A circuit board (1) includes a plurality of transistor elements on an insulating substrate (2). At least one of the plurality of transistor elements is an oxide TFT (10) including, as a channel layer (11), an oxide semiconductor. At least one of the plurality of transistor elements is an a-SiTFT (20) (i) being different from the oxide TFT (10) in functions as circuit components and (ii) including, as a channel layer (21), an amorphous silicon semiconductor. The oxide TFT (10) is a top gate transistor, and the a-SiTFT (20) is a bottom gate transistor. This provides: a configuration that can (a) enhance the performance of the circuit board equipped with the TFTs differing in their respective functions as circuit components and (b) reduce the area necessary for mounting the TFTs; and a method for producing the circuit board.

Claims

1. A circuit board of a display device comprising:

a plurality of transistor elements on an insulating substrate, the plurality of transistor elements including;

a first type of the plurality of transistor elements including a first channel layer which is made of a first semiconductor material and arranged in a first area of the insulating substrate; and

a second type of the plurality of transistor elements including a second channel layer which is made of a second semiconductor material which is different from the first semiconductor material and being arranged in a second area of the insulating substrate which is outside of the first area;

wherein

the first area of the insulating substrate is a display area of the display device and the second area of the insulating substrate includes a protection circuit of the display device, and

the first semiconductor material is an oxide semiconductor having a first electrical resistivity, and the second semiconductor material has a second electrical resistivity which is higher than the first electrical resistivity,

the second type of the plurality of transistor elements are diodes, pairs of the diodes are arranged to define diode short rings,

the pairs of the diodes include a first diode and a second diode,

the first diode defined by the second type of the plurality of transistor elements includes a first gate electrode, a first source electrode and a first drain electrode wherein the first source electrode is electrically connected to the first gate electrode,

the second diode defined by the second type of the plurality of transistor elements includes a second gate electrode, a second source electrode and a second drain electrode wherein the second source electrode is electrically connected to the second gate electrode, and

the first drain electrode vertically overlaps the second gate electrode in a single layer, and the second drain electrode vertically overlaps the first gate electrode in a single layer.

2. The circuit board as set forth in claim 1, wherein:

the first type of the plurality of transistor elements are switching elements configured to drive a pixel provided in the display area.

3. The circuit board as set forth in claim 1, wherein the protection circuit is configured to provide circuitry protection which protects the first type of the plurality of transistor elements from excess voltage.

4. The circuit board as set forth in claim 3, wherein the protection circuit is configured to protect the first type of the plurality of transistor elements from excess voltage by providing an electrical discharging path between a gate wire and a grounding wire.

5. The circuit board as set forth in claim 3, wherein the protection circuit is configured to protect the first type of the plurality of transistor elements from excess voltage by providing an electrical discharging path between a gate wire and an adjacent gate wire.

6. The circuit board as set forth in claim 1, wherein the oxide semiconductor material is In—

Ga—

Zn—

O (IGZO).

7. The circuit board as set forth in claim 1, wherein the first type of the plurality of transistor elements is a top gate thin film transistor.

8. The circuit board as set forth in claim 1, wherein the first type of the plurality of transistor elements is a bottom gate thin film transistor.

9. A display panel comprising the circuit board as set forth in claim 1.