Methods for atomic layer etching
First Claim
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1. A method of processing a substrate having a surface, the method comprising:
- laterally moving a surface beneath a gas distribution plate comprising a plurality of elongate gas ports including a first gas outlet to deliver a first reactive gas;
forming an etch layer on the substrate surface comprising exposing the substrate surface to the first reactive gas;
locally changing a temperature of the substrate surface from a first temperature to a second temperature, the second temperature being sufficient to vaporize the etch layer; and
locally removing the vaporized etch layer from the surface,wherein at a portion of the surface is being exposed to the first reactive gas while the local temperature of a different portion of the surface is being changed.
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Abstract
Provided are methods of etching a substrate using atomic layer deposition apparatus. Atomic layer deposition apparatus including a gas distribution plate with a thermal element are discussed. The thermal element is capable of locally changing the temperature of a portion of the surface of the substrate to vaporize an etch layer deposited on the substrate.
22 Citations
19 Claims
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1. A method of processing a substrate having a surface, the method comprising:
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laterally moving a surface beneath a gas distribution plate comprising a plurality of elongate gas ports including a first gas outlet to deliver a first reactive gas; forming an etch layer on the substrate surface comprising exposing the substrate surface to the first reactive gas; locally changing a temperature of the substrate surface from a first temperature to a second temperature, the second temperature being sufficient to vaporize the etch layer; and locally removing the vaporized etch layer from the surface, wherein at a portion of the surface is being exposed to the first reactive gas while the local temperature of a different portion of the surface is being changed. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method of processing a substrate comprising:
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laterally moving a substrate having a surface beneath a gas distribution plate comprising a plurality of elongate gas ports including a first gas outlet to deliver a first reactive gas and second gas outlet to deliver a second reactive gas; delivering the first reactive gas to at least a portion of the substrate surface to form a first reactive layer on the substrate surface; locally removing unreacted first reactive gas; delivering the second reactive gas to at least a portion of the substrate surface having a first reactive layer to react with the first reactive layer to form an etch layer on the substrate surface; locally removing unreacted second reactive gas; locally changing the temperature of the substrate surface from a first temperature to a second temperature, the second temperature being sufficient to vaporize the etch layer; and removing the vaporized etch layer. - View Dependent Claims (15, 16, 17, 18, 19)
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Specification