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Stacked through-silicon via (TSV) transformer structure

  • US 9,111,933 B2
  • Filed: 05/17/2012
  • Issued: 08/18/2015
  • Est. Priority Date: 05/17/2012
  • Status: Active Grant
First Claim
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1. A distributed active transformer comprising:

  • a primary winding, comprising;

    a first set of conductive vias extending in a direction between a first surface and a second surface of an element;

    a first set of first electrically conductive lines extending along the first surface; and

    a first set of second electrically conductive lines extending along the second surface; and

    a secondary winding, comprising;

    a second set of conductive vias extending a direction between the first surface and the second surface;

    a second set of first electrically conductive lines extending along the first surface; and

    a second set of second electrically conductive lines extending along the second surface, wherein, when energized, the primary winding generates magnetic flux extending in a direction parallel to the first surface and the second surface, wherein the secondary winding receives energy transferred by the magnetic flux generated by the primary winding, wherein the secondary winding provides a plurality of tapping points, wherein at least one tapping point of the plurality tapping points is on the first surface located at a junction of a second electrically conductive line in the second set of first electrically conductive lines and a conductive via in the second set of conductive vias, and wherein at least one other tapping point of the plurality of tapping points is on the second surface located at a junction of a second electrically conductive line in the second set of second electrically conductive lines and a conductive via in the second set of conductive vias.

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