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Three-dimensional semiconductor architecture

  • US 9,111,936 B2
  • Filed: 05/29/2014
  • Issued: 08/18/2015
  • Est. Priority Date: 04/07/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a substrate with a first side and a second side, the substrate comprising an interior region and a periphery region surrounding the interior region;

    first active devices on the first side of the substrate, at least one of the first active devices being located at least partially within the substrate;

    a first set of through substrate vias located within the periphery region and extending from the first side of the substrate to the second side of the substrate; and

    a second set of through substrate vias located within the interior region and extending from the first side of the substrate to the second side of the substrate, wherein the second set of through substrate vias are part of a power matrix, the second set of through substrate vias bisecting the substrate into a first part and a second part.

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