Light emitting device having wavelength converting layer

• US 9,112,121 B2
• Filed: 01/31/2012
• Issued: 08/18/2015
• Est. Priority Date: 02/09/2011
• Status: Active Grant

• Current Assignee: Seoul Semiconductor Co., Ltd.
• Original Assignee: Seoul Semiconductor Co., Ltd.
• Inventors: Jung, Jung Hwa, Kim, Jung Doo, Jung, Seoung Ho, Kim, Min Hye, Kim, Yoo Jin
• Primary Examiner(s): GREEN, TELLY D
• Application Number:
  US13/984,154
• Publication Number:
  US 20130313585A1
• Time in Patent Office: 1,295 Days
• Field of Search: 257/13, 257/E33.012, 257/E33.061, 257/E33.03, 257/E33.065, 257/E33.066, 257/E33.069, 257/89
• US Class Current: 1/1
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/50 Wavelength conversion elements
• CPC Class Codes: H01L 33/505 characterised by the shape, e.g. plate or foil
• CPC Class Codes: H01L 33/508 having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

Disclosed is a light emitting device having a wavelength converting layer. The light emitting device comprises a plurality of semiconductor stacked structures; connectors for electrically connecting the plurality of semiconductor stacked structures to one another; a single wavelength converting layer for covering the plurality of semiconductor stacked structures; an electrode electrically connected to at least one of the semiconductor stacked structures; and at least one additional electrode positioned on the electrode, passing through the wavelength converting layer to be exposed to the outside, and forming a current input terminal to the light emitting device or a current output terminal from the light emitting device. Since the single wavelength converting layer covers the plurality of semiconductor stacked structures, the plurality of semiconductor stacked structures can be integrally mounted on a chip mounting member such as a package or a module.

Claims

1. A light emitting device, comprising:

semiconductor stacked structures electrically connected to one another by connectors;

a wavelength converting layer covering the semiconductor stacked structures;

a first electrode electrically connected to a first stacked structure of the semiconductor stacked structures;

a second electrode electrically connected to a second stacked structure of the semiconductor stacked structures;

at least one first additional electrode disposed on the first electrode, passing through the wavelength converting layer, and exposed to the outside of the wavelength converting layer; and

at least one second additional electrode disposed on the second electrode, passing through the wavelength converting layer, and exposed to the outside of the wavelength converting layer,

the first additional electrode being a current input electrode to the light emitting device and the second additional electrode being a current output electrode from the light emitting device.

2. The light emitting device of claim 1, wherein the wavelength converting layer covers the connectors.

3. The light emitting device of claim 1, wherein the connectors comprise bonding wires.

4. The light emitting device of claim 1, wherein the semiconductor stacked structures are spaced apart from each other by the wavelength converting layer.

5. The light emitting device of claim 1, wherein:

the first stacked structure is configured to emit light of a first wavelength; and

the second stacked structure is configured to emit of a second wavelength longer than the first wavelength.

6. The light emitting device of claim 5, further comprising light emitting diode (LED) chips,

wherein each of the LED chips comprises:

a substrate; and

a semiconductor stacked structure of the semiconductor stacked structures disposed on the substrate.

7. The light emitting device of claim 6, wherein the LED chips comprise:

a first LED chip configured to emit the light of the first wavelength; and

a second LED chip configured to emit the light of the second wavelength longer than the first wavelength.

8. The light emitting device of claim 7, further comprising a support substrate on which the LED chips are disposed.

9. The light emitting device of claim 8, further comprising a bonding pattern disposed on the support substrate.

10. The light emitting device of claim 6, wherein at least one of the LED chips comprises light emitting cells.

11. The light emitting device of claim 1, further comprising a support substrate, wherein the semiconductor stacked structures are spaced apart by the support substrate.

12. The light emitting device of claim 1, further comprising a spacer layer interposed between the wavelength converting layer and the semiconductor stacked structures.

13. The light emitting device of claim 12, wherein the spacer layer comprises an insulating layer.

14. The light emitting device of claim 12, wherein the spacer layer comprises a distributed Bragg reflector (DBR).

15. The light emitting device of claim 14, wherein the spacer layer further comprises a stress relief layer interposed between the DBR and the semiconductor stacked structures.

16. The light emitting device of claim 1, wherein the first additional electrode is narrower than the first electrode and the second additional electrode is narrower than the second electrode.

17. The light emitting device of claim 16, wherein the width of the first additional electrode decreases as the first additional electrode extends away from the first electrode and the width of the second additional electrode decreases as the second additional electrode extends away from the second electrode.

18. The light emitting device of claim 1, wherein at least one of the semiconductor stacked structures comprises light emitting cells, and the light emitting cells are electrically connected to one another by wires.

19. A light emitting device, comprising:

a support substrate comprising first and second lead electrodes;

light emitting diode (LED) chips disposed on a first surface of the support substrate; and

a wavelength converting layer covering the LED chips,

wherein the first and second lead electrodes pass through the support substrate and extend to a second surface of the support substrate opposite to the first surface,

wherein the LED chips are serially connected to one another between the first and second lead electrodes.

20. The light emitting device of claim 19, wherein the LED chips comprise:

a first LED chip configured to emit light of a first wavelength; and

a second LED chip configured to emit light of a second wavelength longer than the first wavelength.

21. The light emitting device of claim 19, further comprising bonding wires electrically connecting the LED chips to one another.

22. The light emitting device of claim 19, wherein the LED chips are flip-bonded on the support substrate.